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				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	...DRAIN CURRENT (AMPERES) 1.5 V GS 140 120 100 80 60 NORMALIZED TO = 10V @ 0.5 I [Cont.] D TJ = +25C TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 1.4 1.3 1.2 VGS=10V 1.1 1.0 0.9 VGS=20V T...
Description	47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVFR APT20M22LVFR
OCR Text	V (R) FREDFET TO-264 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology...DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	66.12K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVR
OCR Text	V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	64.27K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5012 APT5012WVR
OCR Text	V (R) TO-267 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the J...DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms ...
Description	POWER MOS V 500V 40A 0.120 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.40K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5014B2VR
OCR Text	V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
File Size	61.78K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014BFLL APT5014SFLL
OCR Text	... ns MAX UNIT Amps Volts V/ns ns 35 140 1.3 15 250 525 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 1.6 6.0 13 21 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5014LVR
OCR Text	V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms ...
Description	POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.64K / 4 Page	View it Online	Download Datasheet

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