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n-channel Datasheet PDF File

For n-channel Found Datasheets File :: 81469 Search Time::2.046ms
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				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	... integral reverse --- --- -76 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Re...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	... integral reverse --- --- -76 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMR23N60E
OCR Text	n-channel silicon power mosfet features maintains both low power loss and low noise lower r ds (on) characteristic more controllable switching dv/dt by gate resistance smaller v gs ringing waveform during switching narrow band of the gate ...
Description	n-channel SILICON POWER MOSFET
File Size	462.19K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV23N50ES
OCR Text	n-channel silicon power mosfet features maintains both low power loss and low noise lower r ds (on) characteristic more controllable switching dv/dt by gate resistance smaller v gs ringing waveform during switching narrow band of the gate ...
Description	n-channel SILICON POWER MOSFET
File Size	438.34K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9952
OCR Text	...gy Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 N-Ch P-Ch VDSS 30V -30V 2 7 3 6 4 5...
Description	Power MOSFET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	SZNUF8152MUT2G NUF8152
OCR Text	... = 17 pf r = 28 filter + esd n filter + esd n s21 (db) frequency (hz) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 1.0e + 6 10.0e + 6 100.0e ...channel 1 filter 2 2 & 15 filter + esd channel 2 filter 3 3 & 14 filter + esd channel 3 filter 4 4 &...
Description	8 Line LCD & Camera EMI Filter with ESD Protection 8-Channel EMI Filter with Integrated ESD Protection
File Size	172.73K / 6 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSP7492N
OCR Text	n-channel enhancement mosfet 18-sep-2013 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free descrip...
Description	n-channel Enhancement MOSFET
File Size	521.12K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	... integral reverse --- --- -27 p-n junction diode. S --- --- -5.5 V TJ = 25C, IS = -6.7A, VGS = 0V --- 80 160 ns TJ = 25C, IF = -6.7A --- 96...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Re...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	... integral reverse --- --- -44 p-n junction diode. S --- --- -6.3 V TJ = 25C, IS = -11A, VGS = 0V --- 100 200 ns TJ = 25C, IF = -11A --- 320...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Re...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV23N50E
OCR Text	n-channel silicon power mosfet features maintains both low power loss and low noise lower r ds (on) characteristic more controllable switching dv/dt by gate resistance smaller v gs ringing waveform during switching narrow band of the gate ...
Description	n-channel SILICON POWER MOSFET
File Size	405.75K / 5 Page	View it Online	Download Datasheet

For n-channel Found Datasheets File :: 81469 Search Time::2.046ms
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