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Philips
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| Part No. |
BLF1046 BLF1046_7
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| OCR Text |
ldmos transistor
Product specification Supersedes data of 2000 Oct 04 2000 Dec 20
Philips Semiconductors
Product specification
UHF power ldmos transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * So... |
| Description |
UHF power ldmos transistor
From old datasheet system
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| File Size |
93.13K /
12 Page |
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Infineon Technologies A...
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| Part No. |
PXAC192908FVV1R250
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| OCR Text |
...hermally-enhanced high power rf ldmos fet 240 w, 28 v, 1930 C 1995 mhz description the pxac192908fv is a 240-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the ... |
| Description |
Thermally-Enhanced High Power RF ldmos FET 240 W, 28 V, 1930 ?1995 MHz
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| File Size |
360.02K /
8 Page |
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Infineon Technologies A...
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| Part No. |
PTVA104501EHV1R250
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| OCR Text |
...hermally-enhanced high power rf ldmos fet 450 w, 50 v, 960 C 1215 mhz description the ptva104501eh ldmos fet is designed for use in power ampli - fer applications in the 960 to 1215 mhz frequency band. features include high gain and therm... |
| Description |
Thermally-Enhanced High Power RF ldmos FET 450 W, 50 V, 960 ?1215 MHz
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| File Size |
342.54K /
8 Page |
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Infineon Technologies A...
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| Part No. |
PTVA101K02EVV1R250
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| OCR Text |
...hermally-enhanced high power rf ldmos fet 1000 w, 50 v, 1030 / 1090 mhz description the ptva101k02ev ldmos fet is designed for use in power amplifer applications in the 1030 mhz / 1090 mhz frequency band. features include high... |
| Description |
Thermally-Enhanced High Power RF ldmos FET 1000 W, 50 V, 1030 / 1090 MHz
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| File Size |
444.18K /
9 Page |
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Infineon Technologies A...
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| Part No. |
PTFC262808SVV1R250 PTFC262808SVV1R250XTMA1
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| OCR Text |
...hermally-enhanced high power rf ldmos fet 280 w, 28 v, 2620 ? 2690 mhz description the ptfc262808sv is a 280-watt ldmos fet intended for use in multi-standard cellular power ampli? er applications in the 2620 to 2690 mhz frequency band. f... |
| Description |
Thermally-Enhanced High Power RF ldmos FET 280 W, 28 V, 2620 ?2690 MHz
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| File Size |
174.24K /
8 Page |
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Infineon Technologies A...
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| Part No. |
PTFC262157FHV1R250 PTFC262157FHV1R250XTMA1 PTFC262157FHV1R0XTMA1
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| OCR Text |
...hermally-enhanced high power rf ldmos fet 200 w, 28 v, 2620 C 2690 mhz description the ptfc262157fh ldmos fet is designed for use in doherty cellular power applications in the 2620 mhz to 2690 mhz frequency band. input and output... |
| Description |
Thermally-Enhanced High Power RF ldmos FET 200 W, 28 V, 2620 ?2690 MHz
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| File Size |
390.48K /
9 Page |
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Infineon Technologies A...
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| Part No. |
PTFC260202FCV1R250 PTFC260202FCV1R0XTMA1 PTFC260202FCV1R250XTMA1
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| OCR Text |
...hermally-enhanced high power rf ldmos fet 25 w, 28 v, 2495 C 2690 mhz description the ptfc260202fc integrates two independent 10-watt ldmos fets and is designed for use in cellular amplifer applications in the 2495 to 2690 mhz f... |
| Description |
Thermally-Enhanced High Power RF ldmos FET 25 W, 28 V, 2495 ?2690 MHz
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| File Size |
336.86K /
9 Page |
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Infineon Technologies A...
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| Part No. |
PTFB213208FVV1R250
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| OCR Text |
...hermally-enhanced high power rf ldmos fet 320 w, 28 v, 2110 ? 2170 mhz description the ptfb213208sv is a 320-watt ldmos fet intended for use in multi-standard cellular power ampli? er applications in the 2110 to 2170 mhz frequency band. f... |
| Description |
Thermally-Enhanced High Power RF ldmos FET 320 W, 28 V, 2110 ?2170 MHz
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| File Size |
226.38K /
13 Page |
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it Online |
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Price and Availability
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