...SCRIPTION *With TO-220 package *High breakdown voltage *High transition frequency APPLICATIONS *For line-operated af amplifier and chrominan...hFE-1 hFE -2 COB fT
TYP.
MAX
UNIT V V V
5.0 1.2 20 10 10
V V A A A
150 8 55 pF MHz...
...ure 6. Capacitance
Figure 7. High Frequency Current Gain
TJ = 125C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
200 k 100 k 70 k 50 k...hFE, DC CURRENT GAIN
25C
-55C
VCE = 5.0 V 500
2.0 k 5.0 7.0
10
20 30 50 70 100 200...
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP)
q 2 1 3
...hFE 100 160 250 160 250 350 250 400 630 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 10 10 100 nA nA
A...
Description
Si-Epitaxial PlanarTransistors NPN Silicon af Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦(高电流增益高集电极电流低集电极发射极饱和电压)
...0 C For general af applications High collector current High current gain Low collector-emitter saturation voltage
o o o
3 1 2
A L BS
...hFE(1) hFE(2) VCE(sat) VBE & VBE(sat) Test conditions MIN TYP MAX UNIT V V V
o
Ic=100A, IE=0 I...
...) *Wide Area of Safe Operation *High Current Capability
APPLICATIONS *Designed for af high power amplifier applications.
ABSOLUTE MAXI...hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT
Current-Gain--Bandwidth Product
hFE...
High collector current * High current gain * Low collector-emitter saturation voltage
SOT-23
COLLECTOR
3
MECHANICAL DATA
* * * * *
...hFE(1) VCE(sat) VBE(sat) VBE(ON) 100 BC817-16 BC817-25 BC817-40 BC817-16 BC817-25 BC817-40 MIN. 50 4...
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz
The CA3227 consists of five general purpose sili...hFE. Hence, the use of IEBO rather than V(BR)EBO. These devices are also susceptible to damage by el...
Description
From old datasheet system High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz