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				ON Semiconductor
Part No.	NSBC123TPDP6T5G
OCR Text	...3tpdp6 (sot ? 963) one junction heated total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 231 269 1.9 2.2 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 540 464 c/w ...
Description	Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = k
File Size	100.66K / 6 Page	View it Online	Download Datasheet

				Rectron Semiconductor
Part No.	NSBC144EDP6T5G
OCR Text	...teristic symbol max unit single heated total device dissipation t a = 25 c (note 1) derate above 25 c p d 231 1.9 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 540 c/w total device dissipation t a = 25 c (note 2) de...
Description
File Size	100.17K / 7 Page	View it Online	Download Datasheet

				Rectron Semiconductor
Part No.	NSBC144EPDP6T5G
OCR Text	...teristic symbol max unit single heated total device dissipation t a = 25 c (note 1) derate above 25 c p d 231 1.9 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 540 c/w total device dissipation t a = 25 c (note 2) de...
Description
File Size	97.78K / 7 Page	View it Online	Download Datasheet

				Rectron Semiconductor
Part No.	NSBC144WDP6T5G
OCR Text	...teristic symbol max unit single heated total device dissipation t a = 25 c (note 1) derate above 25 c p d 231 1.9 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 540 c/w total device dissipation t a = 25 c (note 2) de...
Description
File Size	117.54K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BAV70DXV6T1 BAV70DXV6T5
OCR Text	...cs characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 2) 2.9 (note 2) mw mw/ c thermal resistance junction-to-ambient r ja 350 (note 2) c/w characteristic (both j...
Description	Small Signal Switching Diodes in SOT563
File Size	49.77K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSS40300DDR2G
OCR Text	...teristic symbol max unit single heated total device dissipation (note 1) t a = 25 c derate above 25 c p d 576 4.6 mw mw/ c thermal resistance, junction ? to ? ambient (note 1) r ja 217 c/w total device dissipation (note 2) t a = 25 ...
Description	Dual 40 V 6.0 A / Low VCE(sat) PNP Transistor
File Size	126.98K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSBC123EDXV6 NSBC123EDXV6T1G MUN5231DW1T1G
OCR Text	...231dw1 (sot ? 363) one junction heated total device dissipation t a = 25 ? c (note 1) (note 2) derate above 25 ? c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ ? c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 ? ...
Description	Dual NPN Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
File Size	126.14K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSS40302PDR2G
OCR Text	...teristic symbol max unit single heated total device dissipation (note 1) t a = 25 c derate above 25 c p d 576 4.6 mw mw/ c thermal resistance, junction ? to ? ambient (note 1) r ja 217 c/w total device dissipation (note 2) t a = 25 ...
Description	Complementary 40 V 6.0 A / Low VCE(sat) Transistor
File Size	146.18K / 9 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSTB60ADW1T1/D NSTB60ADW1T1-D
OCR Text	...cs characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1) 256 (note 2) 1.5 (note 1) 2.0 (note 2) mw mw/ c thermal resistance junction-to-ambient r q ja 670 (note 1) 4...
Description	PNP General Purpose and NPN Bias Resistor Transistor Combination
File Size	80.25K / 8 Page	View it Online	Download Datasheet

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