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SYNC-POWER[SYNC POWER Crop.]
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Part No. |
SPC6332S36RG SPC6332
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OCR Text |
Enhancement Mode MOSFET
DESCRIPTION The SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to mini... |
Description |
N & P Pair Enhancement Mode MOSFET
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File Size |
261.05K /
11 Page |
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TI store
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Part No. |
LM5113-Q1 LM5113QDPRRQ1
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OCR Text |
...-a, half-bridge gate driver for enhancement mode gan fets 1 1 features 1 ? qualified for automotive applications ? aec-q100 qualified with the following results: ? device temperature grade 1: -40 c to 125 c ambient operating temperature r... |
Description |
<font color=red>[Old version datasheet]</font> 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs
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File Size |
2,281.79K /
26 Page |
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SYNC-POWER[SYNC POWER Crop.]
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Part No. |
SPC6601ST6RG SPC6601
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OCR Text |
Enhancement Mode MOSFET
DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to mini... |
Description |
N & P Pair Enhancement Mode MOSFET
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File Size |
260.83K /
11 Page |
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it Online |
Download Datasheet |
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SYNC-POWER[SYNC POWER Crop.]
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Part No. |
SPC6602ST6RG SPC6602
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OCR Text |
Enhancement Mode MOSFET
DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to mini... |
Description |
N & P Pair Enhancement Mode MOSFET
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File Size |
262.42K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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