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XC164CS ADP1190 25A12 VN0645 PC150 SE5532NG 2N2025 045PB
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    elite Semiconductor Mem...
Part No. M13S5121632A-2S
Description Double-data-rate architecture, two data transfers per clock cycle

File Size 715.21K  /  48 Page

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    elite Semiconductor Mem...
Part No. F25L08QA-2S
Description Single supply voltage 2.7~3.6V

File Size 369.68K  /  43 Page

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    elite Semiconductor Mem...
Part No. F59D1G81A
Description Voltage Supply: 1.8V (1.7 V ~ 1.95V)

File Size 1,207.92K  /  43 Page

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    elite Semiconductor Mem...
Part No. M14D5121632A-2K
Description Internal pipelined double-data-rate architecture; two data access per clock cycle

File Size 769.45K  /  64 Page

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    elite Semiconductor Mem...
Part No. F59L512M81A
Description Command/Address/Data Multiplexed I/O Port

File Size 1,159.05K  /  40 Page

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    elite Semiconductor Mem...
Part No. F59L4G81A
Description Voltage Supply: 3.3V (2.7V ~ 3.6V)

File Size 1,567.76K  /  54 Page

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    elite Semiconductor Mem...
Part No. F59L2G81A
Description Voltage Supply: 3.3V (2.7V ~ 3.6V)

File Size 1,607.32K  /  55 Page

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    elite Semiconductor Memory Technology, Inc.
Part No. F49L004UA-90T F49L004UA-90N F49L004UA-70N
Description 4 Mbit (512K x 8) 3V Only CMOS Flash Memory 4兆位(为512k × 8V时仅闪存的CMOS
4 Mbit (512K x 8) 3V Only CMOS Flash Memory 4兆位(为512k × 83V时仅闪存的CMOS

File Size 369.98K  /  46 Page

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    elite Semiconductor Memory Technology, Inc.
Part No. M52S16161A-10TG M52S16161A-8BG
Description 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60

File Size 765.60K  /  29 Page

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    M12L2561616A-5BG2K M12L2561616A-5TG2K M12L2561616A-6BG2K M12L2561616A-6TG2K M12L2561616A-7BG2K M12L2561616A-7TG2K M12L25

elite Semiconductor Memory Technology Inc.
Part No. M12L2561616A-5BG2K M12L2561616A-5TG2K M12L2561616A-6BG2K M12L2561616A-6TG2K M12L2561616A-7BG2K M12L2561616A-7TG2K M12L2561616A2K
Description JEDEC standard 3.3V power supply

File Size 934.51K  /  45 Page

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