| |
|
 |
MOTOROLA
|
| Part No. |
MRF6S19100N
|
| OCR Text |
...teral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarr...Gps D IM3 ACPR IRL 13 24 - 47 - 60 -- 14.5 25.5 - 37 - 51 - 12 16 36 - 35 - 48 - 10 dB % dBc dBc dB
... |
| Description |
MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
| File Size |
613.04K /
16 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MOTOROLA
|
| Part No. |
MRF6S19140H
|
| OCR Text |
...to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL ap...Gps D IM3 ACPR IRL 15 26 -- -- -- 16 27.5 - 37 - 51 - 15 18 -- - 35 - 48 -9 dB % dBc dBc dB
MRF6S... |
| Description |
MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
| File Size |
435.04K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
MOTOROLA
|
| Part No. |
MRF6S21100N
|
| OCR Text |
...ateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarr...Gps D IM3 ACPR IRL 13 24 - 47 - 50 -- 14.5 25.5 - 37 - 40 - 12 16 36 - 35 - 38 - 10 dB % dBc dBc dB
... |
| Description |
MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
|
| File Size |
670.29K /
16 Page |
View
it Online |
Download Datasheet |
| |
|
|
MOTOROLA
|
| Part No. |
MW4IC001NR4
|
| OCR Text |
...r applications: GSM EDGE, TDMA, CDMA and W - CDMA. * Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power -- 900 mW PEP Po...Gps -- 13 -- dB Coss Crss -- -- 45 0.62 -- -- pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.7 0.48 ... |
| Description |
800鈥?170 MHz, 900 mW, 28 V W鈥揅DMA RF LDMOS Wideband Integrated Power Amplifier
|
| File Size |
601.03K /
16 Page |
View
it Online |
Download Datasheet |
| |
|
|
INFINEON[Infineon Technologies AG]
|
| Part No. |
PTF080601F PTF080601E PTF080601A PTF080601
|
| OCR Text |
...LDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and ...Gps D IMD
Min
-- -- --
Typ
18 42 -32
Max
-- -- --
Units
dB % dBc
EDGE Measuremen... |
| Description |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
| File Size |
293.07K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
RFMD[RF Micro Devices]
|
| Part No. |
RF2890
|
| OCR Text |
CDMA Cellular/GPS Applications * JCDMA/GPS Applications * AMPS/GPS Applications Product Description
-A4.00 SQ 2.00 TYP
DUAL-BAND CDMA CELLULAR/GPS LOW NOISE AMPLIFIER/MIXER
* CDMA Modem/Data Cards * Commercial and Consumer Systems * ... |
| Description |
DUAL-BAND CDMA CELLULAR/GPS LOW NOISE AMPLIFIER/MIXER
|
| File Size |
180.66K /
14 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
