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    MGF0846G

Mitsubishi Electric Semiconductor
Part No. MGF0846G
OCR Text ...power dissipation 64 w tch cannel temperature 230 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaN HEMT (small signal gain stage)

File Size 114.58K  /  4 Page

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    Samsung Electronic
Part No. S3C72H8
OCR Text ...rcuit type c pull-up resistor p-cannel output disable data v dd resistor enable input disable figure 1 -6. pin circuit type d-1 (p0, p2, p3, p6) product overview s3c72h8/p72h8 1- 8 v dd pull-up enable v dd in/out pne output disable data...
Description Single-Chip CMOS Microcontrollers

File Size 194.88K  /  24 Page

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    MGFC38V586711

Mitsubishi Electric Semiconductor
Part No. MGFC38V586711
OCR Text ...ower dissipation 30 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 104.65K  /  3 Page

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    MGFC38V5964 MGFC38V596411

Mitsubishi Electric Semiconductor
Part No. MGFC38V5964 MGFC38V596411
OCR Text ...ower dissipation 30 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 108.26K  /  3 Page

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    MGF0910A MGF0910A11

Mitsubishi Electric Semiconductor
Part No. MGF0910A MGF0910A11
OCR Text ...wer dissipation 27.3 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaAs FET (small signal gain stage)

File Size 207.53K  /  4 Page

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    MGF0911A MGF0911A11

Mitsubishi Electric Semiconductor
Part No. MGF0911A MGF0911A11
OCR Text ...wer dissipation 37.5 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaAs FET (small signal gain stage)

File Size 210.41K  /  4 Page

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    MGF0912A MGF0912A11

Mitsubishi Electric Semiconductor
Part No. MGF0912A MGF0912A11
OCR Text ...wer dissipation 53.6 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaAs FET (small signal gain stage)

File Size 167.30K  /  3 Page

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    MGF0913A MGF0913A11

Mitsubishi Electric Semiconductor
Part No. MGF0913A MGF0913A11
OCR Text ...ower dissipation 5.0 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. i dss sa...
Description High-power GaAs FET (small signal gain stage)

File Size 106.86K  /  4 Page

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    MGF0915A MGF0915A11

Mitsubishi Electric Semiconductor
Part No. MGF0915A MGF0915A11
OCR Text ...wer dissipation 18.7 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. i dss sa...
Description High-power GaAs FET (small signal gain stage)

File Size 107.57K  /  4 Page

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    MGF0916A MGF0916A11

Mitsubishi Electric Semiconductor
Part No. MGF0916A MGF0916A11
OCR Text ...ower dissipation 1.5 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. i dss sa...
Description High-power GaAs FET (small signal gain stage)

File Size 107.33K  /  4 Page

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