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SMART Modular Technologies
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Part No. |
SG5127RD325693SE SG5127RD325693SF SG5127RD325693UU
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OCR Text |
...ba2 input - selects which sdram bank of the eight is activated. addressing device configuration 256mx4 number of internal banks 8 bank address ba0 - ba2 auto precharge a10/ap bc switch on the fly a12/bc row address a0 - a13 column address a... |
Description |
4GByte (512Mx72) DDR3 SDRAM Module
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File Size |
374.14K /
45 Page |
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it Online |
Download Datasheet |
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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Part No. |
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
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OCR Text |
... Clock Clock Enable Chip Select bank Address Address Row Address Strobe, Column Address Strobe, Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground No Connection PIN NAME DESCRIPTION The system... |
Description |
SDRAM - 64Mb 4 banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
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File Size |
142.41K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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