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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	...e CLK with RAS low. Enables row access & precharge. Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access. Enables write operation and row precharge. Latches data in starting from CAS, WE active....
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	...e CLK with RAS low. Enables row access & precharge. Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access. Enables write operation and row precharge. Latches data in starting from CAS, WE active....
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6T0808C1D-TL70 K6T0808C1D-DL55 K6T0808C1D-DL70 K6T0808C1D-GB55 K6T0808C1D-GF70 K6T0808C1D-F K6T0808C1D-GB70 K6T0808C1D-GL55 K6T0808C1D-GL70 K6T0808C1D-GP70 K6T0808C1D-L K6T0808C1D-P K6T0808C1D-RB55 K6T0808C1D-RB70 K6T0808C1D-RF70 K6T0808C1D-RL70 K6T0808C1D-RP70 K6T0808C1D-TB55 K6T0808C1D-TB70 K6T0808C1D-TF70 K6T0808C1D-B K6T0808C1D-DB55 K6T0808C1D-DB70
OCR Text	... ns Min Read cycle time Address access time Chip select to output Output enable to valid output Read Chip select to low-Z output Output enable to low-Z output Chip disable to high-Z output Output disable to high-Z output Output hold from ad...
Description	32K X 8 STANDARD SRAM, 70 ns, PDSO28 32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM D2 - GLENAIR 32Kx8位低功耗CMOS静态RAM
File Size	169.00K / 9 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64BAMD-10 MH16S64BAMD-7 MH16S64BAMD-8 MH16S64BAM
OCR Text	...-8 -10 100MHz 100MHz 100MHz CLK access Time (Component SDRAM) 6.0ns(CL=3) 6.0ns(CL=3) 8.0ns(CL=3) Back side Front side 124pin 1...precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycle /6...
Description	1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
File Size	588.19K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64BAMD-6 B99029
OCR Text	...TURES Type name Max. Frequency access Time from CLK [component level] 94pin 95pin 10pin 11pin MH16S64BAMD-6 133MHz 5.4ns (CL...precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycles e...
Description	From old datasheet system 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
File Size	576.78K / 40 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64DAMD-6 MH16S64DAMD-7 MH16S64DAMD-8 B99056
OCR Text	... -7 -8 133MHz 100MHz 100MHz CLK access Time (Component SDRAM) 5.4ns(CL=3) 6.0ns(CL=2) 6.0ns(CL=3) 124pin 125pin 40pin 41pin Utilizes...precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycle /6...
Description	From old datasheet system 1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM
File Size	710.53K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72BAMD-10 MH16S72BAMD-7 MH16S72BAMD-8 B98041_A
OCR Text	...-8 -10 100MHz 100MHz 100MHz CLK access Time (Component SDRAM) 6.0ns(CL=3) 6.0ns(CL=3) 8.0ns(CL=3) Back side Front side 124pin 1...precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycle /6...
Description	From old datasheet system 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
File Size	589.26K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72BAMD-6 B99030
OCR Text	...TURES Type name Max. Frequency access Time from CLK [component level] 94pin 95pin 10pin 11pin MH16S72BAMD-6 133MHz 5.4ns (CL...precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycles e...
Description	From old datasheet system 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
File Size	579.21K / 40 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72DAMD-6 MH16S72DAMD-7 MH16S72DAMD-8 B99057
OCR Text	... -7 -8 133MHz 100MHz 100MHz CLK access Time (Component SDRAM) 5.4ns(CL=3) 6.0ns(CL=2) 6.0ns(CL=3) 124pin 125pin 40pin 41pin Utilizes...precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycle /6...
Description	From old datasheet system 1207959552-BIT (16777216 - WORD BY 72-BIT)Synchronous DRAM
File Size	714.25K / 55 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
Part No.	Q67100-Q2099 HYM328025GS-60 HYM328025GS-50 HYM328025S-60 HYM328025S-50 Q67100-Q2098 Q67100-Q2330 HYM328025S
OCR Text	...C main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (...precharge time RAS pulse width CAS pulse width Row address setup time Row address hold time Column a...
Description	8M x 32 Bit DRAM Module 8M x 32-Bit EDO-DRAM Module
File Size	55.87K / 11 Page	View it Online	Download Datasheet

For access precharge Found Datasheets File :: 6626 Search Time::1.843ms
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