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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL
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OCR Text |
...V Avalanche Time ID = 3.6A, L = 3mh 240 s
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 61A ISD = 25A ISD = 61A, dISD/dt = 100A/s ISD = 61A, dISD/dt = 1... |
Description |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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File Size |
202.72K /
11 Page |
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IRF[International Rectifier] International Rectifier, Corp.
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Part No. |
JANSR2N7498T2 IRHF57230SE
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OCR Text |
... = 50V, starting TJ = 25C, L= 5.3mh Peak IL = 7.0A, VGS = 12V ISD 7.0A, di/dt 219A/s, VDD 200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation ... |
Description |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔(到39
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File Size |
125.69K /
8 Page |
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Sanken
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Part No. |
2SC5130
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OCR Text |
...hout Heatsink Natural Cooling L=3mh -IB2=0.5A Duty:less than 1%
nk
10
Without Heatsink Natural Cooling
Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150
Co... |
Description |
Silicon NPN Transistor
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File Size |
29.48K /
2 Page |
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SANKEN[Sanken electric]
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Part No. |
2SC5130
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OCR Text |
...hout Heatsink Natural Cooling L=3mh -IB2=0.5A Duty:less than 1%
nk
10
Without Heatsink Natural Cooling
Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150
Co... |
Description |
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
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File Size |
23.19K /
1 Page |
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![IRFS240B IRFS240BFP001](Maker_logo/fairchild_semiconductor.GIF)
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
IRFS240B IRFS240BFP001
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OCR Text |
...m junction temperature 2. L = 2.3mh, IAS = 12.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 18A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem... |
Description |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A 200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
681.78K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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Part No. |
ISL9N307AD3ST
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OCR Text |
...V Avalanche Time ID = 3.3A, L = 3mh 220 s
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 50A ISD = 25A ISD = 50A, dISD/dt = 100A/s ISD = 50A, dISD/dt = 1... |
Description |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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File Size |
186.44K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
ISL9N307AS3ST ISL9N307AP3
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OCR Text |
...V Avalanche Time ID = 3.3A, L = 3mh 220 s
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 52A ISD = 25A ISD = 52A, dISD/dt = 100A/s ISD = 52A, dISD/dt = 1... |
Description |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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File Size |
140.32K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
IRFP244B IRFP244BFP001
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OCR Text |
...mum junction temperature 2. L = 3mh, IAS = 16A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 14A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe... |
Description |
250V N-Channel B-FET / Substitute of IRFP244 & IRFP244A 250V N-Channel MOSFET
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File Size |
685.65K /
8 Page |
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it Online |
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Price and Availability
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