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B7643 C100E2 0N60C DFLT9V0A CS51221 0603CR12 914212 22105
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  3mh Datasheet PDF File

For 3mh Found Datasheets File :: 1010    Search Time::3.921ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL
OCR Text ...V Avalanche Time ID = 3.6A, L = 3mh 240 s Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 61A ISD = 25A ISD = 61A, dISD/dt = 100A/s ISD = 61A, dISD/dt = 1...
Description N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

File Size 202.72K  /  11 Page

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    IRF[International Rectifier]
International Rectifier, Corp.
Part No. JANSR2N7498T2 IRHF57230SE
OCR Text ... = 50V, starting TJ = 25C, L= 5.3mh Peak IL = 7.0A, VGS = 12V ISD 7.0A, di/dt 219A/s, VDD 200V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation ...
Description 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔(到39

File Size 125.69K  /  8 Page

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    SW630

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ETC[ETC]
Part No. SW630
OCR Text ... by junction temperature 2. L=6.3mh,IAS=9A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD9A,di/dt100A/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. 2/6 REV0.1 ...
Description N-Channel MOSFET

File Size 653.05K  /  6 Page

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    17335 17106

C&D Technologies
Part No. 17335 17106
OCR Text ...470.0 680.0 1.0mH 1.5mH 2.2mH 3.3mh 4.7mH 6.8mH 10.0mH 15.0mH 22.0mH 33.0mH 47.0mH 68.0mH FEATURES Radial Format Up to 1.8A IDC 10H to 68mH Low DC Resistance Miniature Size PCB Mounting MIL-I-23053/5 Class III Sleeving Fully Tinn...
Description Radial Lead Inductors

File Size 85.07K  /  3 Page

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    Sanken
Part No. 2SC5130
OCR Text ...hout Heatsink Natural Cooling L=3mh -IB2=0.5A Duty:less than 1% nk 10 Without Heatsink Natural Cooling Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150 Co...
Description Silicon NPN Transistor

File Size 29.48K  /  2 Page

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    SANKEN[Sanken electric]
Part No. 2SC5130
OCR Text ...hout Heatsink Natural Cooling L=3mh -IB2=0.5A Duty:less than 1% nk 10 Without Heatsink Natural Cooling Without Heatsink 2 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0.1 5 10 50 100 500 0 0 25 50 75 100 125 150 Co...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.19K  /  1 Page

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    IRFS240B IRFS240BFP001

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. IRFS240B IRFS240BFP001
OCR Text ...m junction temperature 2. L = 2.3mh, IAS = 12.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 18A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem...
Description 200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A
200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 681.78K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. ISL9N307AD3ST
OCR Text ...V Avalanche Time ID = 3.3A, L = 3mh 220 s Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 50A ISD = 25A ISD = 50A, dISD/dt = 100A/s ISD = 50A, dISD/dt = 1...
Description N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

File Size 186.44K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N307AS3ST ISL9N307AP3
OCR Text ...V Avalanche Time ID = 3.3A, L = 3mh 220 s Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 52A ISD = 25A ISD = 52A, dISD/dt = 100A/s ISD = 52A, dISD/dt = 1...
Description N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

File Size 140.32K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. IRFP244B IRFP244BFP001
OCR Text ...mum junction temperature 2. L = 3mh, IAS = 16A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 14A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe...
Description 250V N-Channel B-FET / Substitute of IRFP244 & IRFP244A
250V N-Channel MOSFET

File Size 685.65K  /  8 Page

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For 3mh Found Datasheets File :: 1010    Search Time::3.921ms    
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