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POLYFET[Polyfet RF Devices]
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Part No. |
MCDK21
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OCR Text |
...)
MCDK21 F=88MHz Vds=12V Pin=20mw
0
12 11 10 9 8 Pout (W) 7 6 5 4 3 2 1 0 1.5 2.0 2.5 3.0 Vagc (V) 3.5 4.0 4.5 0 5 25 30
M D Harmonics Vds=12V Vagc=5V Pout=10W C K21
-5 -10 -15 dBc -20 -25 -30 -35 -40 -45 20 40 60 Freq M hz 80 100 ... |
Description |
Power RF Amplifiers
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File Size |
32.70K /
2 Page |
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POLYFET[Polyfet RF Devices]
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Part No. |
MADL01
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OCR Text |
...6
MADL01 F=30MHz Vds=28V Pin=20mw
30.5
12 11 10 9
28
24 20
Gain
8
Gain Pout
Gain (dB)
6 5 4
29.0
12 Efficiency @10W = 50%
Pout
28.5
3 2
8 4
28.0 0.50
Gain
1 0 1.5 2 2.5 Vagc (V) 3 3.5 4... |
Description |
Power RF Amplifiers
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File Size |
32.09K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
M68739M 68739M
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OCR Text |
...Bc -
VDD=9.6V, VGG=2.5V, Pin=20mw
-20 4 No parasitic oscillation No degradation or destroy
ZG=50, VDD=4.8-13.2V, Load VSWR <4:1 VDD=13.2V, Pin=20mw, PO=7W (VGG Adjust), ZL=20:1
Note. Above parameters, ratings, limits and test co... |
Description |
From old datasheet system RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
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File Size |
13.33K /
1 Page |
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it Online |
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