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For 128m-byte Found Datasheets File :: 930 Search Time::1.469ms
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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D26323QG-GC2A
OCR Text	128M GDDR SDRAM 128Mbit GDDR SDRAM Revision 1.2 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, ...Byte ) * Data I/O transactions on both edges of Data strobe * DLL aligns DQ and DQS transitions with...
Description	128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
File Size	313.05K / 18 Page	View it Online	Download Datasheet

				Macronix International
Part No.	MX28F128J3 MX28F640J3
OCR Text	128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY FEATURES * 2.7V to 3.6V operation voltage * Block Structure - 32 x 128Kbyte Erase Blocks (3...Byte Write Buffer - 6 us/byte Effective Programming Time * Enhanced Data Protection Features Absolut...
Description	(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
File Size	1,078.09K / 56 Page	View it Online	Download Datasheet

				ETC
Part No.	MX28F128J3 MX28F128J3TBC-15
OCR Text	128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY FEATURES * 2.7V to 3.6V operation voltage * Block Structure - 128 x 128Kbyte Erase Blocks ...Byte Write Buffer - 6 us/byte Effective Programming Time Enhanced Data Protection Features Absolut...
Description	EEPROM 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
File Size	27.23K / 6 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M-Y K9K2G08U0M K9XXG08UXM-E K9XXG08UXM-K K9XXG08UXM-P K9XXG08UXM-Y K9XXG16UXM-E K9XXG16UXM-K K9XXG16UXM-P K9XXG16UXM-Y K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08Q0M-PCB0 K9K2G08U0M-VCB0 K9K2G08U0M-FCB0 K9K2G08Q0M-YCB0
OCR Text	128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -...Byte ID after 90h ID read command is don't cared. The 5th Byte ID after 90h ID read command is delet...
Description	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
File Size	676.60K / 39 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TH58100FTI
OCR Text	128M x 8 BITS) CMOS NAND E PROM DESCRIPTION The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Program...byte static register which allows program and read data to be transferred between the register and t...
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	487.51K / 43 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	M6MGD13TW34DWG
OCR Text	... be small (S-CSP) that contents 128M-bit Flash memory and 32M-bit mounting area, weight and small power dissipation. Mobile RAM in a 72-pin ...byte control for Mobile RAM : Upper byte control for Mobile RAM : Non Connection : Don't Use 1 ...
Description	Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
File Size	119.53K / 3 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYB39S128800CT-75 HYB39S128160CT-7.5 HYB39S128800CT-7.5 HYB39S128400CT-7 HYB39S128400CT-7.5 HYB39S128400CT-75 HYB39S128400CT-8 HYB39S128800CT-7 HYB39S128800CT-8 HYB39S128160CT-7 HYB39S128160CT-75 HYB39S128160CT-8
OCR Text	...tion for x4, x8 & x16 Organized 128M-DRAMs INFINEON Technologies 3 9.01 HYB 39S128400/800/160CT(L) 128-MBit Synchronous DRAM Functional Block Diagrams Column Addresses A0 - A9, A11, AP, BA0, BA1 Row Addresses A0 - A11, ...
Description	128-MBit Synchronous DRAM
File Size	316.21K / 51 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HYMP512R72L HYMP512R72X HYMP512R724-C4 HYMP512R724-C5 HYMP512R724-E3 HYMP512R724-E4 HYMP512R724-Y5 HYMP512R724-Y6 HYMP512R72L4-C4 HYMP512R72L4-C5 HYMP512R72L4-E3 HYMP512R72L4-E4 HYMP512R72L4-Y5 HYMP512R72L4-Y6
OCR Text	128Mx72 bits DDR2 SDRAM Registered DIMM HYMP512R72(L)4 Revision History No. 0.1 History 1) Defined Target Spec. 1) Added Pin Capacitance Spec. & IDD Spec. 2) Corrected SPD typo(byte #22,#42) Corrected Pin assignment table Draft Date F...
Description	DDR2 SDRAM - Registered DIMM 1GB DDR2 SDRAM Registered DIMM
File Size	226.14K / 18 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K5P2880YCM
OCR Text	128M Bit (16Mx8) Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial issue. D...Byte Block Erase : (16K + 512)Byte * Flash Fast Write Cycle Time Program time : 300us(Typ.) Block Er...
Description	Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
File Size	549.77K / 29 Page	View it Online	Download Datasheet

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