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  0.0088 Datasheet PDF File

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    SANYO
Part No. 2SC5774
OCR Text ... tf Conditions VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(--)5A IC=(--)5A, IB=(--)0.5A IC=(--)5mA, IE=0 IC=(--)50mA, RBE= IE=(--)5mA, IC=0 See sp...
Description 140V / 10A AF70W Output Applications

File Size 40.66K  /  5 Page

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    SANYO
Part No. 2SC5791
OCR Text ... unit : mm 2174A [2SC5791] 16.0 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 1 2 5.45 3 3.5 ...
Description Horizontal Deflection Switching Transistors

File Size 39.63K  /  5 Page

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    SANYO
Part No. 2SC5792
OCR Text ... unit : mm 2174A [2SC5792] 16.0 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 1 2 5.45 3 3.5 ...
Description Horizontal Deflection Switching Transistors

File Size 38.08K  /  5 Page

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    SANYO
Part No. 2SC5794
OCR Text ... unit : mm 2174A [2SC5794] 16.0 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 ...
Description Horizontal Deflection Switching Transistors

File Size 36.24K  /  5 Page

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    2SC5873S

Rohm
Part No. 2SC5873S
OCR Text 0.5A) 2SC5873S Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complemen...
Description Medium power transistor (30V, 0.5A)

File Size 65.57K  /  4 Page

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    SANYO
Part No. 2SC5980
OCR Text ...s Ratings 100 100 50 6 8 11 2 1.0 15 150 --55 to +150 Unit V V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=40V, IE=0 VEB=4V, I...
Description Low-Saturation Voltage Transistors

File Size 44.64K  /  5 Page

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    2SD1368

Hitachi Semiconductor
Part No. 2SD1368
OCR Text ...mina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 100 50 6 -- -- 1 Typ -- -- -- -- -- -- -- -- 100 20 Max -- -- -- 0.1 0.1 500 0.3 1.2 -- --...
Description Silicon NPN Epitaxial

File Size 29.96K  /  6 Page

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    Renesas
Part No. 2SD1368
OCR Text ...mina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 100 50 6 -- -- 1 Typ -- -- -- -- -- -- -- -- 100 20 Max -- -- -- 0.1 0.1 500 0.3 1.2 -- --...
Description Transistors>Amplifiers/Bipolar

File Size 46.59K  /  8 Page

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    Panasonic
Part No. 2SD1771A 2SD1771
OCR Text ...0.1 10.00.3 s Features 2.0 1.50.1 1.5max. 1.1max. q q q High collector to emitter VCEO Large collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, et...
Description Silicon NPN triple diffusion planar type

File Size 53.60K  /  3 Page

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