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    2SC3512

Hitachi Semiconductor
Part No. 2SC3512
OCR Text ...-- -- Typ -- -- -- -- 120 1.2 6.0 10.5 1.6 Max -- 1 1 1 250 1.6 -- -- -- pF GHz dB dB Unit V A A A Test conditions I C = 10 A, IE = 0 VCE = 10 V, RBE = VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 27.36K  /  6 Page

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    2SC3513

Hitachi Semiconductor
Part No. 2SC3513
OCR Text ... -- -- -- Typ -- -- -- -- 120 1.0 6.0 10 1.6 Max -- 1 1 1 250 1.5 -- -- -- pF GHz dB dB Unit V A A A Test conditions I C = 10 A, IE = 0 VCE = 10 V, RBE = VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 M...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 28.03K  /  6 Page

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    2SC3793

Hitachi Semiconductor
Part No. 2SC3793
OCR Text ... -- -- -- Typ -- -- -- -- -- -- 0.7 2.9 Max -- -- 1 1 200 0.5 1 -- V pF GHz Unit V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = VCB = 15 V, IE = 0 VEB = 3 V, IC = 0 VCE = 10 V, IC = 5 mA I C = 20 mA, IB = 4 mA VCB = 10 V, IE ...
Description Silicon NPN Epitaxial

File Size 26.59K  /  6 Page

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    2SC3795 2SC3795A

Panasonic Semiconductor
Part No. 2SC3795 2SC3795A
OCR Text ...ink with one screw Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.0 1.40.1 1.30.2 Solder Dip emitter voltage 2SC3795A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base curr...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 61.99K  /  3 Page

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    2SC4153

Sanken electric
Part No. 2SC4153
OCR Text ... 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V V 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VC...
Description Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)

File Size 23.37K  /  1 Page

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    2SC4159 2SA1606 A1606

Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
Part No. 2SC4159 2SA1606 A1606
OCR Text ... hFE fT Cob VBE VCB=(-)120V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)300mA VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz VCE=(-)5V, IC=(-)10mA 60* 100 (30)23 (-)1.5 Conditions Ratings min typ max (-)10 (-)10 200* MHz pF V Unit A A * : The 2SA1...
Description 2SA1606
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF 100W Driver Applications
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors for High-Voltage SwitchingAF 100W Driver Application(用于高电压转换,AF 100W驱动器应用的NPN硅外延平面型晶体

File Size 103.64K  /  4 Page

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    SANKEN[Sanken electric]
Part No. 2SC4296
OCR Text ...ternal Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.2A IC=6A, IB...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 24.45K  /  1 Page

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    2SC4297

SANKEN[Sanken electric]
Part No. 2SC4297
OCR Text ...ternal Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 24.86K  /  1 Page

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    SANKEN[Sanken electric]
Part No. 2SC4298
OCR Text ...ternal Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 24.91K  /  1 Page

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    SANKEN[Sanken electric]
Part No. 2SC4299
OCR Text ...9 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ V V 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.99K  /  1 Page

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