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  -160v Datasheet PDF File

For -160v Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    2SA1415 2SC3645 2SA1415R 2SA1415S 2SC3645R

SANYO[Sanyo Semicon Device]
Part No. 2SA1415 2SC3645 2SA1415R 2SA1415S 2SC3645R
Description SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 140MA I(C) | SOT-89
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
High-Voltage Switching, Predriver Applications
High-Voltage Switching/ Predriver Applications

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    Vishay Intertechnology, Inc.
Renesas Technology / Hitachi Semiconductor
Part No. 2SD668 2SD668AC 2SD668D 2SD668AB
Description TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-126 晶体管|晶体管|叩| 160V五(巴西)总裁| 50mA的一c)|26
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 50mA的一(c)|26
Silicon NPN Epitaxial Transistor

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    Magnatec
Part No. BUZ901D BUZ900D
Description N-channel power MOSFET for audio applications, 160V
N-channel power MOSFET for audio applications, 200V
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))

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    Ecliptek, Corp.
Part No. BU705F 2SC3280F 2SC3281F
Description TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 2.5A I(C) | SOT-199
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 12A I(C) | SOT-186VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SOT-186VAR 晶体管|晶体管| npn型| 200伏五(巴西)总裁|5A一c)|的SOT - 186VAR

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    Spansion, Inc.
Part No. CSB649AC CSD669AC CSB649D
Description TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 1.5AI(丙)|126

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    Sanyo
Part No. 2SA1507 2SC3902
Description NPN Epitaxial Planar Silicon Transistors PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications

File Size 51.75K  /  5 Page

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    Fujitsu, Ltd.
Electronic Theatre Controls, Inc.
Zarlink Semiconductor, Inc.
Part No. PG2126 PG2118 PG2119 PG2007 PG2017 PG2036 PG2085 PG2083 PG2122 PG2052 PG2024 PG2058 PG2018 PG2030 PG2102 PG2123 PG2116 PG2111 PG2125 PG2135
Description TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-66
Photoflash Capacitor Chargers with Automatic Refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 125°C
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 2A I(C) | TO-66
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 2A I(C) | TO-46
17µA Max, Dual and Quad, Single Supply, Precision Op Amps; Package: SO; No of Pins: 14; Temperature Range: 0°C to 70°C
TRANSISTOR | BJT | PNP | 140V V(BR)CEO | 2A I(C) | TO-5
High Voltage, 3A, 200kHz Step-Down Switching Regulator; Package: TSSOP; No of Pins: 16; Temperature Range: -40°C to 85°C
17µA Max, Dual and Quad, Single Supply, Precision Op Amps; Package: SO; No of Pins: 14; Temperature Range: -40°C to 85°C
700MHz Low Distortion, Low Noise Differential Amplifier/ADC Driver (AV = 10V/V); Package: QFN; No of Pins: 16; Temperature Range: 0°C to 70°C
Micropower, Dual and Quad, Single Supply, Precision Op Amps; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-5 晶体管|晶体管|进步党| 120伏特五(巴西)总裁|甲一(c)|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-46 晶体管|晶体管|进步党| 60V的五(巴西)总裁|甲一c)|的TO - 46
High Voltage, 3A, 200kHz Step-Down Switching Regulator; Package: TSSOP; No of Pins: 16; Temperature Range: -40&deg;C to 85&deg;C 晶体管|晶体管|进步党| 140伏特五(巴西)总裁|甲一(c)|6
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-46 晶体管|晶体管|进步党| 60V的五(巴西)总裁|甲一(c)|的TO - 46
700MHz Low Distortion, Low Noise Differential Amplifier/ADC Driver (AV = 10V/V); Package: QFN; No of Pins: 16; Temperature Range: 0&deg;C to 70&deg;C
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 2A I(C) | TO-66
TRANSISTOR | BJT | PNP | 140V V(BR)CEO | 2A I(C) | TO-66

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    SGS Thomson Microelectronics
Part No. DTZ400 DTZ440 DTZ400A DTZ440A DTZ100 DTZ100A DTZ110 DTZ110A DTZ120 DTZ120A DTZ130 PFZ100 PFZ120 PFZ150 PFZ130 PFZ100A PFZ110A PFZ120A PFZ150A PFZ160 PFZ160A PFZ170 PFZ170A PFZ180 PFZ180A PFZ200 PFZ200A PFZ220 PFZ220A PFZ250A PFZ280 PFZ280A PFZ300 PFZ300A PFZ320 PFZ320A PFZ350 DTZ150 DTZ150A DTZ160 DTZ170 DTZ160A DTZ170A DTZ180A DTZ320A PFZ350A DTZ220A DTZ250 DTZ280 DTZ280A DTZ300 DTZ300A DTZ350 DTZ350A
Description V(br): 400V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 440V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 100V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 110V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 120V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 130V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 100V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 120V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 150V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 130V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 110V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 160V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 170V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 180V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 200V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 220V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 250V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 280V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 300V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 320V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; unidirectional transient voltage suppressor
V(br): 150V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 160V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 170V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 180V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 320V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 220V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 250V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 280V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 300V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor

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    BUZ900P BUZ901P

Magnatec
Seme LAB
Part No. BUZ900P BUZ901P
Description N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))
N?CHANNEL POWER MOSFET

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    Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
Part No. GAL16V8D-20QPI GAL16V8D-20QJI GAL16V8D-7LP GAL16V8D-7LPI GAL16V8D-7LJ GAL16V8D-7LS GAL16V8D-7LJI GAL16V8D-25LJI GAL16V8D-3LJ GAL16V8D-15LP GAL16V8D-25LPI GAL16V8D-25QJ GAL16V8D-15QJ GAL16V8D-15LPI LATTICESEMICONDUCTORCORP-GAL16V8D-25LS
Description Aluminum Snap-In Capacitor; Capacitance: 2700uF; Voltage: 160V; Case Size: 30x50 mm; Packaging: Bulk
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 3.5 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDSO20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PQCC20
IC,MICROCONTROLLER,8-BIT,68HC08 CPU,CMOS,DIP,8PIN,PLASTIC RoHS Compliant: No

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