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IRF[International Rectifier] International Rectifier, Corp.
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Part No. |
IRF3808L IRF3808S RF3808S
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OCR Text |
..., Gate-to-Source Voltage (V)
10000
8
Ciss
6
1000
Coss
4
2
Crss
100 1 10 100
0 0 40 80 120 160
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source ... |
Description |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?
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File Size |
159.77K /
11 Page |
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Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] HSMC CORP.
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Part No. |
HJ112
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OCR Text |
...rrent Gain & Collector Current
10000 125 C 1000 75 C
o o
Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 2/4
Current Gain & Collector Current
10000 125 C 1000 75 C
o o
hFE
hFE
100 25 C 10 ... |
Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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File Size |
41.26K /
4 Page |
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IRF[International Rectifier]
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Part No. |
IRLP3803
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OCR Text |
...
Next Data Sheet
IRLP3803
10000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP
10000
ID , Drain-to-Source Current (A)
1000
ID , Drain-to-Source Current (A)
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V T... |
Description |
HEXFET? Power MOSFET(VDSS = 30V,RDS(on) = 0.006Ohm,ID = 120A) HEXFET㈢ Power MOSFET(VDSS = 30V,RDS(on) = 0.006Ohm,ID = 120A)
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File Size |
287.83K /
8 Page |
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Hi-Sincerity Mocroelectroni... HSMC[Hi-Sincerity Mocroelectronics]
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Part No. |
HI649A
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OCR Text |
... Gain & Collector Current
1000 10000 VCE(sat) @ IC=10IB
Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2002.04.03 Page No. : 2/3
Saturation Voltage & Collector Current
125 C
o
100
Saturation Voltage (mV)
75... |
Description |
PNP EPITAXIAL PLANAR TRANSISTOR
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File Size |
26.04K /
3 Page |
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HSMC[Hi-Sincerity Mocroelectronics]
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Part No. |
HI3669
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OCR Text |
...rrent Gain & Collector Current
10000 100000
Spec. No. : HE9029-B Issued Date : 1997.11.14 Revised Date : 2000.11.01 Page No. : 2/3
Saturation Voltage & Collector Current
VCE=10V
100
Saturation Voltage (mV)
1000
10000
... |
Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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File Size |
31.35K /
3 Page |
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Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
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Part No. |
HI117
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OCR Text |
...rrent Gain & Collector Current
10000 100000
Spec. No. : HE9031 Issued Date : 1998.07.01 Revised Date : 2001.09.14 Page No. : 2/4
Saturation Voltage & Collector Current
hFE @ VCE=3V
Saturation Voltage (mV)
1000 hFE @ VCE=4V
... |
Description |
PNP EPITAXIAL PLANAR TRANSISTOR
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File Size |
36.71K /
4 Page |
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it Online |
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M/A-COM Technology Solution...
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Part No. |
02013-DSH-001-G
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OCR Text |
... transimpedance vs iin 100 1000 10000 100000 1 10 100 1000 input current (ua p-p) transimpedance (ohms)
product specification 02013-dsh-001-g mindspeed technologies ? 4 mindspeed proprietary and confidential vcc = 3.3v, temperature = ... |
Description |
CMOS Transimpedance Amplifier with AGC for Fiber-optic Networks up to 3.2 Gbps
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File Size |
269.79K /
20 Page |
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it Online |
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HSMC[Hi-Sincerity Mocroelectronics]
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Part No. |
HI112
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OCR Text |
...rrent Gain & Collector Current
10000 125 C 1000 75 C
o o
Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 2/4
Current Gain & Collector Current
10000 125 C 1000 75 C
o o
hFE
hFE
100 25 C 10 ... |
Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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File Size |
40.37K /
4 Page |
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Alpha & Omega Semiconductor...
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Part No. |
AOT1608L
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OCR Text |
...e-rating (note f) 1 10 100 1000 10000 0.0001 0.01 1 100 10000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c 0 40 80 120 160 200 1 10 100 1000 10000 i ar (a) peak avalanche current ... |
Description |
60V N-Channel Rugged Planar MOSFET
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File Size |
412.68K /
6 Page |
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it Online |
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Price and Availability
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