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IXYS Corporation
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| Part No. |
IXTQ160N10T IXTH160N10T
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| OCR Text |
...e width limited by t jm 430 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s 100 ns v r = 50 v, v gs = 0...306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product p... |
| Description |
Preliminary Technical Information TrenchMVTM Power MOSFET
160 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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| File Size |
182.19K /
5 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXFP05N100M
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| OCR Text |
...by t jm 3 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns i rm ...306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - ... |
| Description |
High Voltage HiperFET
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| File Size |
105.46K /
4 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXTA220N055T IXTP220N055T
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| OCR Text |
...e width limited by t jm 600 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s70ns v r = 25 v, v gs = 0 v ...306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537
? 2006 ixys corporation all rights reserved f... |
| Description |
Preliminary Technical Information TrenchMVTM Power MOSFET
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| File Size |
206.42K /
5 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXTA180N10T7
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| OCR Text |
...e width limited by t jm 450 a v sd i f = 25 a, v gs = 0 v, note 1 0.95 v t rr i f = 25 a, -di/dt = 100 a/ s 100 ns v r = 50 v, v gs = ...306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product p... |
| Description |
PreliminaryTechnical Information TrenchMVTM Power MOSFET
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| File Size |
189.22K /
5 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXFB50N80Q2
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| OCR Text |
... t jm 200 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm ...306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2010 ixys corporation, all rights rese... |
| Description |
HiPerFET Power MOSFETs Q-Class
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| File Size |
163.74K /
4 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXTP160N075T IXTA160N075T
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| OCR Text |
...e width limited by t jm 430 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s80ns v r = 40 v, v gs = 0 v ...306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537
? 2006 ixys corporation all rights reserved i... |
| Description |
Preliminary Technical Information TrenchMVTM Power MOSFET
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| File Size |
169.69K /
5 Page |
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it Online |
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IXYS Corporation
http://
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| Part No. |
IXFH44N50P IXFT44N50P IXFK44N50P
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| OCR Text |
... v 44 a i sm repetitive 110 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt ...306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-247 (ixfh) outline terminals: 1 - gate 2 - drain 3... |
| Description |
PolarHV HiPerFET Power MOSFET
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| File Size |
288.01K /
5 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXTQ230N085T IXTH230N085T
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| OCR Text |
...e width limited by t jm 520 a v sd i f = 50 a, v gs = 0 v, note 1 1.0 v t rr i f = 50 a, -di/dt = 100 a/ms 90 n s v r = 25 v, v gs = 0 ...306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product p... |
| Description |
N-Channel Enhancement Mode Avalanche Rated
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| File Size |
196.65K /
5 Page |
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it Online |
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