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For p-mos Found Datasheets File :: 15274 Search Time::3.204ms
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				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features * Low on-resistance R DS(on) = 0.065 typ. (at V GS = -10V, ID = -5A) * Low drive current * High speed switching * 4V gate drive devices...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ517
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-575B (Z) 3rd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.18 typ. (at V GS =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. Outl...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.79K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ518
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-580B (Z) 3rd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Out...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	46.74K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ526
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-579B (Z) 4th. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM D G ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ527 2SJ527L 2SJ527S
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.3 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 D ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.03K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jun 1998 Features * Low on-resistance RDS(on) = 0.17 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ529 2SJ529L 2SJ529S
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-654A (Z) 2nd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.12 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.89K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ530 2SJ530L 2SJ530S
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching. Outline DPAK-2 4 D 4 12 G 3 12 S ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	56.07K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ531
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-646A (Z) 2nd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM D ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	49.99K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ532
OCR Text	P Channel MOS FET High Speed Power Switching ADE-208-653B (Z) 3rd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM D ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.69K / 9 Page	View it Online	Download Datasheet

For p-mos Found Datasheets File :: 15274 Search Time::3.204ms
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