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on-resistance Datasheet PDF File

For on-resistance Found Datasheets File :: 222228 Search Time::6.078ms
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				ON Semiconductor
Part No.	NTZD3155CT1G NTZD3155C NTZD3155CT2G NTZD3155CT5G
OCR Text	...g Trench Technology for Low RDS(on) Performance High Efficiency System Performance Low Threshold Voltage ESD Protected Gate Small Footprint ...Resistance Ratings Parameter Junction-to-Ambient - Steady State (Note 2) Junction-to-Ambient - t = ...
Description	Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package.
File Size	108.66K / 8 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9977AGM
OCR Text	... single drive requirement r ds(on) 100m surface mount package i d 3.6a description absolute maximum ratings symbol units v ds v v gs v i...resistance, junction-ambient 3 thermal data parameter gate-source voltage 20 continuous drain curren...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	177.39K / 5 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMS4872N NTMS4872NR2G
OCR Text	on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surfac...RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambien...
Description	Power MOSFET 30 V, 10.2 A, N−Channel, SO−8
File Size	109.76K / 5 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9977AGH
OCR Text	... single drive requirement r ds(on) 100m fast switching characteristic i d 9a description absolute maximum ratings symbol units v ds v v ...resistance, junction-case 10.0 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	58.14K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9977AGH-HF14
OCR Text	... single drive requirement r ds(on) 100m fast switching characteristic i d 9a rohs compliant & halogen-free description absolute maximu...resistance, junction-case 10 /w rthj-a 62.5 /w data and specifications subject to change without n...
Description	Single Drive Requirement
File Size	100.13K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCP8111
OCR Text	... nc (typ.) (3) low drain-source on-resistance: r ds(on) = 90 m ? (typ.) (v gs = -10 v) (4) low leakage current: i dss = -10 a (max) (v ds = -60 v) (5) enhancement mode: v th = -2 to -3 v (v ds = -10 v, i d = -1 ma) 3. 3. 3. 3. ...
Description	Power MOSFET (P-ch single)
File Size	229.51K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK28N65W5
OCR Text	... ns (typ.) (2) low drain-source on-resistance: r ds(on) = 0.11 ? (typ.) by used to super junction structure : dtmos (3) easy to control gate switching (4) enhancement mode: v th = 3 to 4.5 v (v ds = 10 v, i d = 1.6 ma) 3. 3. 3. 3....
Description	MOSFETs Power MOSFET (N-ch 500V<VDSS≤700V)
File Size	251.12K / 10 Page	View it Online	Download Datasheet

				Infineon
Part No.	SPP30N10
OCR Text	...product summary v ds 100 v r ds(on) 44 m i d 35 a feature n-channel enhancement mode 175c operating temperature avalanche rate...resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - ambient, leaded r thja...
Description	SIPMOS Power Transistor
File Size	477.34K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI7772DP SI7772DP-T1-GE3
OCR Text	...roduct summary v ds (v) r ds(on) ( ) i d (a) q g (typ.) 30 0.013 at v gs = 10 v 35.6 a 8.3 nc 0.0165 at v gs = 4.5 v 31.6 orderin...resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 10...
Description	N-Channel 30-V (D-S) MOSFET with Schottky Diode N-Channel 30-V (D-S) MOSFET with Schottky Diode
File Size	481.84K / 13 Page	View it Online	Download Datasheet

For on-resistance Found Datasheets File :: 222228 Search Time::6.078ms
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