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California Eastern Laboratories, Inc.
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Part No. |
NX5307 NX5307EH-AZ NX5307EK-AZ
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OCR Text |
MQW FP LASER DIODE IN CAN PACKAGE NX5307 SERIES FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
FEATURES
* OPTICAL OUTPUT POWER: PO = 10 mW * LOW THRESHOLD CURRENT : ITH = 10 mA * HIGH SPEED: tr = 0.2 ns MAX tf = 0.2 ns MAX * WIDE OPERATING TEMPERA... |
Description |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION 邻舍1310纳米InGaAsP多量子阱中的FP激光可以为2.5 GB的包装二极管/ s的内部办公应
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File Size |
405.90K /
8 Page |
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California Eastern Laboratories
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Part No. |
NX5310 NX5310EH-AZ NX5310EK-AZ
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OCR Text |
MQW FP LASER DIODE IN CAN PACKAGE NX5310 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS
FEATURES
* OPTICAL OUTPUT POWER: Po = 5.0 mW * LOW THRESHOLD CURRENT : Ith = 6 mA * DIFFERENTIAL EFFICIENCY: d =0.3 W/A * WIDE OPERATI... |
Description |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
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File Size |
296.52K /
5 Page |
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California Eastern Laboratories
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Part No. |
NX5311
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OCR Text |
MQW FP LASER DIODE IN CAN PACKAGE NX5311 SERIES FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
FEATURES
* OPTICAL OUTPUT POWER: Po = 10.0 mW * LOW THRESHOLD CURRENT : Ith = 6 mA * DIFFERENTIAL EFFICIENCY: d =0.50 W/A * WIDE OPERATING TEMPERATURE... |
Description |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
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File Size |
156.15K /
4 Page |
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California Eastern Laboratories, Inc.
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Part No. |
NX5312 NX5312EH-AZ
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OCR Text |
MQW FP LASER DIODE IN CAN PACKAGE NX5312 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS
FEATURES
* OPTICAL OUTPUT POWER: Po = 5.0 mW * LOW THRESHOLD CURRENT : Ith = 6 mA * DIFFERENTIAL EFFICIENCY: d =0.45 W/A * WIDE OPERATING TEMPE... |
Description |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管可以55 MB的包秒,622 Mb /秒,1.25 Gb / s的应
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File Size |
307.12K /
5 Page |
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California Eastern Laboratories
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Part No. |
NX5313
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OCR Text |
MQW FP LASER DIODE IN CAN PACKAGE NX5313 SERIES FOR FTTH PON APPLICATIONS
FEATURES
* OPTICAL OUTPUT POWER: Po = 13.0 mW * LOW THRESHOLD CURRENT : Ith = 6 mA * DIFFERENTIAL EFFICIENCY: d =0.5 W/A * WIDE OPERATING TEMPERATURE RANGE: TC = -4... |
Description |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
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File Size |
157.66K /
4 Page |
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California Eastern Laboratories, Inc.
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Part No. |
NX5315 NX5315EH-AZ NX5315EK-AZ
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OCR Text |
MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS
FEATURES
* OPTICAL OUTPUT POWER: Po = 13.0 mW * LOW THRESHOLD CURRENT : Ith = 6 mA * DIFFERENTIAL EFFICIENCY: d =0.5 W/A * WIDE OPERATING TEMPERATURE RANGE: TC = -4... |
Description |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管能为光纤到户无源光网络应用工具包
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File Size |
307.66K /
5 Page |
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California Eastern Laboratories
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Part No. |
NX5501 NX5501EH-AZ NX5501EK-AZ
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OCR Text |
mqw-fp LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
FEATURES
* OPTICAL OUTPUT POWER: PO = 5.0 mW * LOW THRESHOLD CURRENT: Ith = 8 mA * DIFFERENTIAL EFFICENCY: D = 0.3 W/A * WIDE OPERATING TEMPERATURE RANGE TC = -40 to +85C * InGaAs MON... |
Description |
NECs 1550 nm InGaAsP mqw-fp LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
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File Size |
401.96K /
7 Page |
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California Eastern Laboratories, Inc.
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Part No. |
NX5504 NX5504EH-AZ NX5504EK-AZ
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OCR Text |
mqw-fp LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
FEATURES
* OPTICAL OUTPUT POWER: PO = 5.0 mW * LOW THRESHOLD CURRENT: Ith = 8 mA * DIFFERENTIAL EFFICENCY: D = 0.3 W/A * WIDE OPERATING TEMPERATURE RANGE TC = -40 to +85C * InGaAs MON... |
Description |
CON 016M ST HDR PC SHRT LCK DRW EJE 100 NECs 1550 nm InGaAsP mqw-fp LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION 邻舍1550纳米InGaAsP多量子阱- FP激光二极管能为光纤到户应用程序
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File Size |
261.31K /
6 Page |
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http:// California Eastern Laboratories, Inc.
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Part No. |
NX7329BB-AA NX7329BB-AA-AZ
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OCR Text |
MQW FP PULSED LASER DIODE NX7329BB-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION (25 mW MIN)
FEATURES
* HIGH OUTPUT POWER: Pf = 50 mW at IFP = 400 mA, Pulse Condition: Pulse Width (PW) = 10 s, Duty = 1% * LONG WAVELENGTH C = 1310 nm
DESCR... |
Description |
NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN) 邻舍1310纳米InGaAsP多量子阱计划生育脉冲LADER二极管的ITDR应用5毫瓦闵同轴封装)
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File Size |
188.89K /
4 Page |
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Price and Availability
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