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  lift Datasheet PDF File

For lift Found Datasheets File :: 510    Search Time::1.437ms    
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA13H3340M_06 RA13H3340M RA13H3340M-101 RA13H3340M06
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=13W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ...
Description RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 92.90K  /  8 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA13H4047M_06 RA13H4047M RA13H4047M-101 RA13H4047M06
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=13W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ...
Description RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 93.46K  /  8 Page

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    Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA13H4452M-E01 RA13H4452M RA13H4452M-01
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=13W, V DD=12.5V and Pin=50mW each stage transistor operating conditions are: Stage 1st 2nd Pin (W) 0.05 2.0 Pout (W) 2.0 13.0 Rth(ch-case) (C...
Description 440-520MHz 13W 12.5V MOBILE RADIO

File Size 63.54K  /  9 Page

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    Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA13H4452M_06 RA13H4452M RA13H4452M-101 RA13H4452M06
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=13W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W) (A)...
Description RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 91.50K  /  8 Page

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    Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA18H1213G_06 RA18H1213G RA18H1213G-101 RA18H1213G06
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=18W, VDD=12.5V and Pin=200mW each stage transistor operating conditions are: IDD @ T=20% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W)...
Description    RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO

File Size 105.59K  /  8 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA30H0608M_06 RA30H0608M RA30H0608M-101 RA30H0608M06
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W) (A)...
Description RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO

File Size 95.56K  /  8 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA30H1317M_06 RA30H1317M RA30H1317M-101 RA30H1317M06
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ...
Description RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

File Size 91.18K  /  8 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA30H1721M-101 RA30H1721M
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ...
Description RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 91.23K  /  8 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA30H2127M_06 RA30H2127M RA30H2127M-101 RA30H2127M06
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W) (A)...
Description RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

File Size 89.74K  /  8 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA30H3340M_06 RA30H3340M RA30H3340M-101 RA30H3340M06
OCR Text ... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ...
Description RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO

File Size 70.27K  /  7 Page

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For lift Found Datasheets File :: 510    Search Time::1.437ms    
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