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  frequencies Datasheet PDF File

For frequencies Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    Integrated Device Techn...
Part No. 5P49V5944
Description    Generates up to two independent output frequencies

File Size 414.27K  /  32 Page

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    Integrated Device Techn...
Part No. 5P49V5943
Description    Generates up to two independent output frequencies

File Size 412.19K  /  33 Page

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    Integrated Device Techn...
Part No. 5P49V5913
Description    Generates up to two independent output frequencies

File Size 437.92K  /  37 Page

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    Integrated Device Techn...
Part No. 5P49V5923
Description    Generates up to two independent output frequencies

File Size 345.17K  /  27 Page

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    Integrated Device Techn...
Part No. 5P49V5914
Description    Generates up to three independent output frequencies

File Size 439.38K  /  37 Page

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    Siemens Semiconductor G...
Part No. Q62702-A1028
Description    Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)

File Size 25.61K  /  4 Page

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    NXP Semiconductors N.V.
Part No. BLF6G27L-50BN BLF6G27LS-50BN
Description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor BLF6G27L-50BN<SOT1112A (CDFM6)|<<http://www.nxp.com/packages/SOT1112A.html<1<Always Pb-free,;BLF6G27L-50BN<SOT1112A (CDFM6)|<<http://www.nxp.com/packages/SOT1112A.html<1<Always Pb-free,;

File Size 206.67K  /  16 Page

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    BLF4G20LS-110B

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BLF4G20LS-110B
Description From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies

File Size 100.62K  /  12 Page

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    BAR63-03 BAR63-03W Q62702-A1025 BAR6303W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAR63-03 BAR63-03W Q62702-A1025 BAR6303W
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) 硅PIN二极管(PIN码的高速开关二极管的射频信号的频率高达3 GHz的低正向电阻极低的电容)
From old datasheet system

File Size 52.30K  /  4 Page

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    BAR63-04 BAR63-05 BAR63-06 Q62702-A1037 Q62702-A1036 BAR63 Q62702-A1038 Q62702-A1039

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAR63-04 BAR63-05 BAR63-06 Q62702-A1037 Q62702-A1036 BAR63 Q62702-A1038 Q62702-A1039
Description Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) 硅PIN二极管(PIN码的高速开关二极管的射频信号的频率高达3 GHz的低正向电阻极低的电容)
From old datasheet system

File Size 80.75K  /  4 Page

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For frequencies Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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