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    HITTITE[Hittite Microwave Corporation]
Part No. HMC337
OCR Text ...erter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 1.28mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two st...
Description GaAs MMIC SUB-HARMONICALLY PUMPED MIXER/ 17 - 25 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 17 - 25 GHz

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    RMPA39200

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. RMPA39200
OCR Text ...dvanced 0.15m gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. Features * 19dB small signal gain (typ.) * 32dBm power out (typ.) * Circuit c...
Description 37 - 40 GHz 1.6 Watt Power Amplifier MMIC
37-40 GHz 1.6 Watt Power Amplifier MMIC

File Size 229.56K  /  8 Page

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    MRFG35005NT1 MRFG35005MT1

Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
Part No. MRFG35005NT1 MRFG35005MT1
OCR Text ... SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0....
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

File Size 119.77K  /  12 Page

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    Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
Part No. AS183-92
OCR Text PHEMT GaAs IC SPDT Switch DC-2.5 GHz AS183-92 Features I P1 dB +30 dBm Typical @ +3 V I IP3 43 dBm Typical @ +3 V I Low Insertion Loss (0.3 dB @ 0.9 GHz) I Low DC Power Consumption I Miniature SC-70 6 Lead Plastic Package SC-70 6 Lead ...
Description PHEMT GaAs IC SPDT Switch DC-2.5 GHz
PHEMT GaAs IC SPDT Switch DC.5 GHz

File Size 36.26K  /  2 Page

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    ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
Part No. AWS5522 AWS5522S26 AWS5522D1
OCR Text ...P. 4. 2X 0.15 CB 1 2 3 E 1 2 3 L C SEATING PLANE e E B TOP VIEW BOTTOM VIEW NOTES : S Y M B O L S Y M B O L DIMENSIONS-MM NOM. MAX. MIN. 0.80 0.00 0.18 1.45 1.45 0.35 0.85 0.01 0.20 REF. 0.23 3.00 BSC 1.60 3.00 ...
Description 0.5 to 2.5 GHz SPDT Switch 0.5.5 GHz SPDT开
0.5 to 2.5 GHz SPDT Switch 500 MHz - 2500 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.8 dB INSERTION LOSS
Switches
The AWS5522 is a single pole, double throw (SPDT) RF switch developed to meet the stringent requirements of GSM and CDMA systems, ...

File Size 190.90K  /  12 Page

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    Anadigics
Part No. AWS5523
OCR Text ...2 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained i...
Description Switches

File Size 108.36K  /  8 Page

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    Agilent
Part No. MGA72543
OCR Text ...ins and the mounting surface, i.e., the temperature at the PCB mounting pads. The primary heat path from the RFIC chip to the system heatsink is by means of conduction through the package leads and ground vias to the groundplane of the PCB....
Description IC,MICROWAVE/MILLIMETER WAVE

File Size 169.04K  /  23 Page

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    SKY74073

Skyworks Solutions Inc.
Part No. SKY74073
OCR Text ...h Electron Mobility Transistor (PHEMT), Single Pole Double Throw (SPDT) GaAs switches. The switches typically draw less than 10 A of current during operation and are designed for low insertion loss and high linearity performance. Electrosta...
Description Dual-Band SPR™ Module for GSM and GPRS Handset Applications
SKY74073: Dual-Band SPR?/a> Module for GSM and GPRS Handset Applications
SKY74073: Dual-Band SPR⑩ Module for GSM and GPRS Handset Applications
SKY74073: Dual-Band SPR Module for GSM and GPRS Handset Applications

File Size 69.75K  /  2 Page

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    TC3967

List of Unclassifed Manufacturers
TRANSCOM
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. TC3967
OCR Text PHEMT GaAs Power FETs FEATURES * * * * * * * * * 2W Typical Output Power 12.5dB Typical Linear Power Gain at 2.45GHz High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO 15V Wg = 5 ...
Description 2W Packaged Self-Bias PHEMT GaAs Power FETs

File Size 24.33K  /  1 Page

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    CHA2093RBF CHA2093RBF_24 CHA2093RBF/24

United Monolithic Semicondu...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
Part No. CHA2093RBF CHA2093RBF_24 CHA2093RBF/24
OCR Text ... the backside of the package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN 1." Ref. : DSCHA2093RBF2057 -26-Feb.-02- 1/8 Specifications subject to change without notice ...
Description 20-30GHz Low Noise Amplifier 20 - 30GHz的低噪声放大

File Size 184.01K  /  8 Page

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