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For di dt Found Datasheets File :: 40682    Search Time::1.203ms    
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    IRFPG50 SIHFPG50 SIHFPG50-E3 IRFPG50PBF IRFPG50-205PBF

Vishay Intertechnology, Inc.
Vishay Siliconix
Part No. IRFPG50 SIHFPG50 SIHFPG50-E3 IRFPG50PBF IRFPG50-205PBF
OCR Text ...A (see fig. 12). c. ISD 6.1 A, di/dt 120 A/s, VDD 600, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91254 S-81368-Rev. A, 21-Jul-08 www.vishay.com 1 IRFPG50...
Description 6.1 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC ROHS COMPLIANT, TO-247, 3 PIN
Power MOSFET

File Size 1,020.74K  /  8 Page

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    IRFR110PBF IRFR110TR IRFR110TRL IRFR110TRLPBF IRFR110TRPBF IRFR110TRRPBF IRFU110 IRFU110PBF IRFR110 SIHFU110-E3 SIHFU110

Vishay Siliconix
Part No. IRFR110PBF IRFR110TR IRFR110TRL IRFR110TRLPBF IRFR110TRPBF IRFR110TRRPBF IRFU110 IRFU110PBF IRFR110 SIHFU110-E3 SIHFU110 SIHFR110-E3 SIHFR110 SIHFR110T SIHFR110T-E3 SIHFR110TL SIHFR110TL-E3 SIHFR110TR-E3
OCR Text ...A (see fig. 12). c. ISD 5.6 A, di/dt 75 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). SYMBOL TJ, Tstg LIMIT - 55 to + 150 260d UNIT C THERMAL RESISTANCE RATINGS PARAMETER Maxi...
Description Power MOSFET

File Size 1,367.67K  /  8 Page

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    IRFR220PBF IRFU220PBF SIHFR220-E3 SIHFR220T SIHFR220T-E3 SIHFR220TL SIHFR220TL-E3 IRFR220TR SIHFR220TR SIHFR220TR-E3 IRF

Vishay Siliconix
Part No. IRFR220PBF IRFU220PBF SIHFR220-E3 SIHFR220T SIHFR220T-E3 SIHFR220TL SIHFR220TL-E3 IRFR220TR SIHFR220TR SIHFR220TR-E3 IRFR220TRL IRFR220TRLPBF IRFR220TRPBF IRFR220TRR IRFR220TRRPBF SIHFU220-E3 IRFU220 SIHFU220 IRFR220 SIHFR220
OCR Text ...A (see fig. 12). d. ISD 5.2 A, di/dt 95 A/s, VDD VDS, TJ 150 C. e. 1.6 mm from case. f. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91...
Description Power MOSFET

File Size 1,443.87K  /  8 Page

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    IRFR224PBF IRFU224PBF SIHFU224-E3 IRFR224TR IRFR224TRL IRFR224TRLPBF IRFR224TRPBF IRFR224 SIHFR224 SIHFR224-E3 SIHFR224T

Vishay Siliconix
Part No. IRFR224PBF IRFU224PBF SIHFU224-E3 IRFR224TR IRFR224TRL IRFR224TRLPBF IRFR224TRPBF IRFR224 SIHFR224 SIHFR224-E3 SIHFR224T-E3 IRFU224 SIHFU224 SIHFR224TL-E3
OCR Text ...A (see fig. 12). c. ISD 3.8 A, di/dt 90 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB Mount)a Maximum Jun...
Description Power MOSFET

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    IRFR420TR IRFR420TRPBF IRFR420 IRFR420PBF SIHFU420-E3 IRFU420PBF IRFU420 SIHFU420 SIHFR420-E3 IRFR120TRL IRFR120TRLPBF S

Vishay Siliconix
Part No. IRFR420TR IRFR420TRPBF IRFR420 IRFR420PBF SIHFU420-E3 IRFU420PBF IRFU420 SIHFU420 SIHFR420-E3 IRFR120TRL IRFR120TRLPBF SIHFR120TL-E3 SIHFR420T-E3
OCR Text ...A (see fig. 12). c. ISD 2.4 A, di/dt 50 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). SYMBOL TJ, Tstg LIMIT - 55 to + 150 260d UNIT C THERMAL RESISTANCE RATINGS PARAMETER Maxi...
Description Power MOSFET

File Size 1,881.02K  /  8 Page

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    Alpha & Omega Semiconductor...
Part No. AO4609
OCR Text ...erse recovery charge i f =8.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8.5a reverse transfer capacitance i f =8.5a, di/dt=100a/ s a: the value of r...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 140.40K  /  7 Page

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    IRFR430A SIHFR430A SIHFR430A-E3 IRFR430APBF SIHFR430AT SIHFR430AT-E3 SIHFR430ATL SIHFR430ATL-E3 IRFR430ATR SIHFR430ATR S

Vishay Siliconix
Part No. IRFR430A SIHFR430A SIHFR430A-E3 IRFR430APBF SIHFR430AT SIHFR430AT-E3 SIHFR430ATL SIHFR430ATL-E3 IRFR430ATR SIHFR430ATR SIHFR430ATR-E3 IRFR430ATRL IRFR430ATRLPBF IRFR430ATRPBF IRFR430ATRR IRFR430ATRRPBF IRFU430A SIHFU430A SIHFU430A-E3 IRFU430APBF
OCR Text ....0 A (see fig. 12). ISD 5.0 A, di/dt 320 A/s, VDD VDS, TJ 150 C. 1.6 mm from case. EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 500 30 5.0 3.2 20 0.91 130 5.0 11 110 3.0 - 55 to + 150 300d ...
Description Power MOSFET

File Size 154.70K  /  8 Page

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    VS-10ETF10PBF

Vishay Siliconix
Part No. VS-10ETF10PBF
OCR Text ...cal reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.1 0.2 0.5 0.4 10etf.. series t j = 25 c i fm = 10 a i fm = 1 a i fm = 2 a i fm = 5 a i fm = 8 a 0.8 0.6 0 0 40 80 120 160 200 t rr - typical reverse rec...
Description Fast Soft Recovery Rectifier diode, 10 A

File Size 256.02K  /  9 Page

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    Z0405MF Z0405MF0AA2 Z0405MF1AA2 Z0405NF Z0405NF0AA2 Z0405NF1AA2 Z0405SF Z0405SF0AA2 Z0405SF1AA2 Z0409MF Z0409MF0AA2 Z040

STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
Part No. Z0405MF Z0405MF0AA2 Z0405MF1AA2 Z0405NF Z0405NF0AA2 Z0405NF1AA2 Z0405SF Z0405SF0AA2 Z0405SF1AA2 Z0409MF Z0409MF0AA2 Z0409MF1AA2 Z0409SF Z0409SF0AA2 Z0409SF1AA2 Z0410MF Z0410MF0AA2 Z0410MF1AA2 Z0402MF0AA2 Z0402NF0AA2 Z0402SF0AA2 Z0402MF0 Z0409NF Z0409NF1AA2 Z0409NF0AA2 Z0402SF Z0402SF1AA2 Z0402NF1AA2 Z0410NF0AA2 Z0402MF1AA2 Z0410 Z0410NF1AA2 Z0410SF1AA2 Z0410SF0AA2
OCR Text ...5 A s A/s A W C A Unit A I t di/dt IGM PG(AV) Tstg Tj tp = 10 ms F = 120 Hz tp = 20 s October 2001 - Ed: 4 1/6 Z04 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Test Conditions Quadrant 02 ...
Description 4A TRIACS
From old datasheet system
Triacs, 4A, 700V, sensitivity 25mA
Triacs, 4A, 600V, sensitivity 25mA

File Size 54.45K  /  6 Page

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    MUBW10-06A6K

IXYS Corporation
Part No. MUBW10-06A6K
OCR Text ...= 125c v cemax = v ces - l s di/dt 18 a t sc (scsoa) short circuit safe operating area v ce = 600 v; v ge = 15 v; t vj = 125c r g = 54 w; non-repetitive 10 s r thjc thermal resistance junction to case (per igbt) 2.75 k/w r thch t...
Description Converter - Brake - Inverter Module NPT IGBT Preliminary data

File Size 220.04K  /  5 Page

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For di dt Found Datasheets File :: 40682    Search Time::1.203ms    
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