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    ES4118 ES4118F

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
ESS Technology
Part No. ES4118 ES4118F
OCR Text ... output. DRAM address bus. DRAM column address strobe. DRAM output enable. DRAM clock enable DRAM write enable. DRAM row address strobe. DRAM data bus. SDRAM chip select [1:0], active low. Data input/output mask. Clock to SDRAM. 3 SAM...
Description Super VCD Processor Product Brief

File Size 64.62K  /  4 Page

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    ES4428 ES4427

ESS Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. ES4428 ES4427
OCR Text .... DRAM address bus [11:0]. DRAM column address strobe. DRAM output enable. DRAM clock enable. DRAM write enable. DRAM row address strobe 0. DRAM row address strobe 1 (active-low). DRAM address bus select 1 output. Only active in 64Mb SDRAM ...
Description Web/DVD Set-Top Box Solution

File Size 119.20K  /  10 Page

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    HY628100A HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1 HY628100AG-55 HY628100AG-70

HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY628100A HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1 HY628100AG-55 HY628100AG-70
OCR Text ... SENSE AMP A0 ADD INPUT BUFFER column DECODER row DECODER I/O1 OUTPUT BUFFER I/O8 A16 CONTROL LOGIC /CS1 CS2 /OE /WE This document is a general product description and is subject to change without notice. Hyundai Electronics does not...
Description 128Kx8bit CMOS SRAM, standby current 1 mA, 70ns
128Kx8bit CMOS SRAM, standby current 1 mA, 55ns
128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:3; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 128Kx8bit CMOS SRAM

File Size 126.52K  /  9 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...ress Buffer Col. Address Buffer column Decoder Data out Buffer OE Note) *1 : 2K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the ...row Address Strobe column Address Strobe Read/Write Input Data Output Enable Power(+5.0V) Power(+3.3...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...ress Buffer Col. Address Buffer column Decoder Data out Buffer OE Note) *1 : 2K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the ...row Address Strobe column Address Strobe Read/Write Input Data Output Enable Power(+5V) Power(+3.3V)...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    Z86K16 Z86K15 Z86K18 Z86K13 Z86K14 Z86K17

ZILOG[Zilog, Inc.]
Part No. Z86K16 Z86K15 Z86K18 Z86K13 Z86K14 Z86K17
OCR Text ...ed to input and output for row, column, clock, data, and LEDs. The on-chip counter/timer is available to relieve the system of administering real-time tasks. Five different internal or external interrupt sources are maskable and prioritized...
Description CMOS Z8 8-Bit MCU Keyboard Controllers

File Size 163.54K  /  24 Page

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    EM91450B EM91450BP EM91450DK EM91450D EM91450AP EM91450 EM91450A EM91450C EM91450CK

EMC[ELAN Microelectronics Corp]
Part No. EM91450B EM91450BP EM91450DK EM91450D EM91450AP EM91450 EM91450A EM91450C EM91450CK
OCR Text ...OL3 COL4/KT Keyboard interface (column) Output circuit row/column programming counter HFO HDO RMUTE XMUTE I/O circuit Memory latch & decoder D/A converter DTMF XIN XOUT Oscillator Timing/Control circuit row1 Ke...
Description TONE/PULSE DIALER WITH LCD INTERFACE AND I.P.P. DETECT FUNCTION

File Size 212.25K  /  24 Page

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    HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM5144

Hitachi Semiconductor
Part No. HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text ...-in/Data-out row address strobe column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS row Driver row Driver RAS Control Circuit 256 k Memory Array Mat 256 k Memory Array Mat I...
Description 1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns

File Size 231.12K  /  27 Page

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    HM91710A HM91710B HM91710AP

EMC[ELAN Microelectronics Corp]
Part No. HM91710A HM91710B HM91710AP
OCR Text ...OL1 OUTPUT INTERFACE CKT. column INTERFACE CKT. PO COL2 COL3 COL4 KERNEL CONTROL CKT. DECODER & DATA LATCH LNB MEMORY OSCI OSCO OSC. DIVIDER row/column PROGRAMMING COUNTER row1 row2 row3 row4 row INTERFAC...
Description IC,TELEPHONE DIALER,TONE/PULSE,CMOS,DIP,16PIN,PLASTIC
TONE/PULSE SWITCHABLE DIALER

File Size 128.41K  /  19 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ...ress Buffer Col. Address Buffer column Decoder DQ8 to DQ15 Note) *1 : 1K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right t...row Address Strobe Upper column Address Strobe Lower column Address Strobe Read/Write Input Data Out...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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