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    MGFC39V5964A MGFC39V5964A11

Mitsubishi Electric Semiconductor
Part No. MGFC39V5964A MGFC39V5964A11
OCR Text ...er dissipation 42.8 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 86.79K  /  2 Page

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    MGFC36V7785A

Mitsubishi Electric Semiconductor
Part No. MGFC36V7785A
OCR Text ...ower dissipation 25 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description C band internally matched power GaAs FET

File Size 86.79K  /  2 Page

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    MGF0904A MGF0904A11

Mitsubishi Electric Semiconductor
Part No. MGF0904A MGF0904A11
OCR Text ...wer dissipation 3.75 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaAs FET (small signal gain stage)

File Size 152.86K  /  4 Page

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    MGF0905A MGF0905A11

Mitsubishi Electric Semiconductor
Part No. MGF0905A MGF0905A11
OCR Text ...power dissipation 12 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaAs FET (small signal gain stage)

File Size 151.78K  /  4 Page

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    MGF0906B MGF0906B11

Mitsubishi Electric Semiconductor
Part No. MGF0906B MGF0906B11
OCR Text ...power dissipation 23 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaAs FET (small signal gain stage)

File Size 175.03K  /  4 Page

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    MGF0907B MGF0907B11

Mitsubishi Electric Semiconductor
Part No. MGF0907B MGF0907B11
OCR Text ...wer dissipation 37.5 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaAs FET (small signal gain stage)

File Size 159.51K  /  4 Page

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    MGFK44A404511

Mitsubishi Electric Semiconductor
Part No. MGFK44A404511
OCR Text ...wer dissipation 100 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max...
Description 14.0-14.5 GHz BAND / 25W

File Size 172.79K  /  3 Page

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    MGF0805A11

Mitsubishi Electric Semiconductor
Part No. MGF0805A11
OCR Text ...power dissipation 21 w tch cannel temperature 175 ? c tstg storage temperature -55 to +150 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaAs FET (small signal gain stage)

File Size 308.17K  /  8 Page

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    MGF0840G

Mitsubishi Electric Semiconductor
Part No. MGF0840G
OCR Text ...power dissipation 21 w tch cannel temperature 230 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaN HEMT (small signal gain stage)

File Size 113.91K  /  4 Page

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    MGF0843G

Mitsubishi Electric Semiconductor
Part No. MGF0843G
OCR Text ...power dissipation 39 w tch cannel temperature 230 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. ...
Description High-power GaN HEMT (small signal gain stage)

File Size 113.80K  /  4 Page

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