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For bonding Found Datasheets File :: 7119    Search Time::2.422ms    
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    HMC55409

Hittite Microwave Corporation
Hittite Microwave Corpo...
Part No. HMC55409
OCR Text ...e at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm micro...
Description GaAs MMIC FUNDAMENTAL MIXER, 11 - 20 GHz

File Size 225.93K  /  6 Page

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    HMC55309

Hittite Microwave Corporation
Hittite Microwave Corpo...
Part No. HMC55309
OCR Text ...e at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm micro...
Description GaAs MMIC FUNDAMENTAL MIXER, 7 - 14 GHz

File Size 215.97K  /  6 Page

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    BCM7402 BCM3252 BCM3252KPBG

Broadcom Corporation.
Part No. BCM7402 BCM3252 BCM3252KPBG
OCR Text bonding basic interactive docsis 2.0+/dsg hd set-top box block diagram ? dual qam in-band demodulators ? out-of-band (oob) demodulator for support of dvs-178 and dvs-167 ? 800dmips dual-threaded r4k mips processor ? docsis ? /eurodocsis? 2....
Description DUAL-CHANNEL FRONT-END DOCSIS 2.0 STB IC WITH CHANNEL bonding

File Size 269.05K  /  2 Page

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    MIMIX BROADBAND INC
Part No. CMM-2-BD-000X
OCR Text ...critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.00...
Description 2000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

File Size 463.19K  /  5 Page

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    MIMIX BROADBAND INC
Part No. CF003-03-000X
OCR Text ...ers; time: 1 min or less. wire bonding: wire size: 0.7 to 1.0 mil in diameter (pre- stressed); thermocompression bonding is preferred over thermosonic bonding. for thermocompression bonding: stage temperature: 250 oc ; bond tip temperat...
Description K BAND, GaAs, N-CHANNEL, RF POWER, HEMFET

File Size 859.38K  /  4 Page

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For bonding Found Datasheets File :: 7119    Search Time::2.422ms    
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