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avalanche Datasheet PDF File

For avalanche Found Datasheets File :: 35009 Search Time::1.875ms
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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ505 2SJ505L 2SJ505S
OCR Text	...ain diode reverse drain current avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings -60 20 -50 -200 -50 -50 214 75 150 -55 to +150 ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ518
OCR Text	...ain Current I DR (A) Repetitive avalanche Energy EAR (mJ) Maximum avalanche Energy vs. Channel Temperature Derating 0.5 I AP = -2 A V DD = -25 V duty < 0.1 % Rg > 50 -5 -4 0.4 -3 -10 V -5 V V GS = 0, 5 V 0.3 -2 0...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	46.74K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ526
OCR Text	...ce to Drain Voltage Repetitive avalanche Energy EAR (mJ) Maximum avalanche Energy vs. Channel Temperature Derating 20 I AP = -12 A V DD = -25 V duty < 0.1 % Rg > 50 -10 Reverse Drain Current I DR (A) -8 16 -6 -10 V -4 V GS...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ527 2SJ527L 2SJ527S
OCR Text	...rce to Drain Voltage -5 Maximum avalanche Energy vs. Channel Temperature Derating Repetitive avalanche Energy EAR (mJ) 2.5 I AP = -5 A V DD = -25 V duty < 0.1 % Rg > 50 Reverse Drain Current I DR (A) -4 -10 V 2.0 -3 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.03K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	... Current I DR (A) -8 Repetitive avalanche Energy EAR (mJ) Maximum avalanche Energy vs. Channel Temperature Derating I AP = -7 A V DD = -25 V duty < 0.1 % Rg 50 -10 10 8 -6 -10 V -4 -5 V V GS = 0, 5 V 6 4 -2 2 0 25 ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ529 2SJ529L 2SJ529S
OCR Text	...n Voltage Pulse Test Repetitive avalanche Energy EAR (mJ) Maximum avalanche Energy vs. Channel Temperature Derating 20 I AP = -10 A V DD = -25 V duty < 0.1 % Rg 50 -10 Reverse Drain Current I DR (A) -8 16 -6 -10 V V GS = 0,...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.89K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ530 2SJ530L 2SJ530S
OCR Text	...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -15 19 30 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	56.07K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ531
OCR Text	...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -18 27 30 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	49.99K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ532
OCR Text	...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -20 34 30 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.69K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ533
OCR Text	...iode reverse drain current I DR avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 -30 77 35 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.60K / 9 Page	View it Online	Download Datasheet

For avalanche Found Datasheets File :: 35009 Search Time::1.875ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |