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600v8a Datasheet PDF File

For 600v8a Found Datasheets File :: 1333 Search Time::2.141ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	FFPF08H60S FFPF08H60STU
OCR Text	...1V(Max.) @ IF=8A ) tm 8A, 600V Hyperfast 2 Rectifier The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial plan...
Description	Hyperfast 2 Rectifier
File Size	108.77K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4BC10SDPBF
OCR Text	...ndard Speed CoPack IGBT VCES = 600V * Extremely low voltage drop 1.1Vtyp. @ 2A * S-Series: Minimizes power dissipation at up to 3 KHz PW...8A 4 1.50 IC = 4A 0 25 50 75 100 125 150 1.00 -60 -40 -20 0 ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	264.82K / 10 Page	View it Online	Download Datasheet

				Infineon
Part No.	IHP10T120
OCR Text	...v ge =15v, t sc 10 s v cc = 600v, t j = 25 c - 48 - a switching characteristic, inductive load, at t j =25 c value pa...8a i c =15a i c =5a i c =2.5a v ge , gate-emitter voltage t j , junction temperature figu...
Description	IGBTs & DuoPacks - 10A / 1200V IGBT and 4A / 1200V Diode in DuoPack
File Size	332.27K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4BC15UD-LPBF IRG4BC15UD-SPBF IRG4BC15UD-L IRG4BC15UD-S
OCR Text	... UltraFast CoPack IGBT VCES = 600V Features UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching * IGBT Co-pa...8A Benefits Best Value for Appliance and Industrial Applications * High noise immune "Positive ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
File Size	312.65K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FCA16N6006 FCA16N60_F109 FCA16N60 FCA16N60-06 FCA16N60-F109
OCR Text	600V N-Channel MOSFET SuperFET FCA16N60 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on)=0.22 * Ultra low gate charge (...8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(No...
Description	600V N-Channel MOSFET
File Size	859.95K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT28GA60BD15 APT28GA60SD15
OCR Text	600V High Speed PT IGBT (R) (B) D3PAK TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 thro...8A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter V...
Description	High Speed PT IGBT
File Size	244.18K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT28GA60K
OCR Text	600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon...8A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter V...
Description	High Speed PT IGBT
File Size	206.30K / 6 Page	View it Online	Download Datasheet

				Kersemi Electronic Co.,...
Part No.	TN815-600B TN815-800B TN815-600H TN805-600H TN805-800H
OCR Text	... 05: 5ma 15: 15ma voltage: 600: 600v 800: 800v package: b: dpak h: ipak packing mode: blank: tube -tr: dpak tape & reel ts 8 20 - 600 b (-tr) sensitive scr series current: 8a sensitivity: 20: 200a voltage: 600: 600v 700: 700v...
Description	8A SCR
File Size	476.20K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IPW60R070P6
OCR Text	600vcoolmos?p6powertransistor ipw60r070p6 datasheet rev.2.0 final powermanagement&multimarket 2 600vcoolmos?p6powertransistor...8a, r g =1.7 w ;seetable9 rise time t r - 15 - ns v dd =400v, v gs =13v, i d =25.8a, r g =1.7 w...
Description	Very high commutation ruggedness
File Size	1,856.83K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IPZ60R070P6-15
OCR Text	600vcoolmos?p6powertransistor ipz60r070p6 datasheet rev.2.0 final powermanagement&multimarket 2 600vcoolmos?p6powertransistor...8a, r g =1.7 w ;seetable9 rise time t r - 14 - ns v dd =400v, v gs =13v, i d =25.8a, r g =1.7 w...
Description	Metal Oxide Semiconductor Field Effect Transistor
File Size	1,478.16K / 15 Page	View it Online	Download Datasheet

For 600v8a Found Datasheets File :: 1333 Search Time::2.141ms
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