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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD1249A 2SD1249
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| OCR Text |
...fT ton tstg tf Conditions VCE = 350v, VBE = 0 VCE = 400v, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 10V, IC = 0.2A, f... |
| Description |
Silicon NPN triple diffusion planar type(For low-freauency power amplification)
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| File Size |
52.76K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD2215A 2SD2215
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| OCR Text |
...fT ton tstg tf Conditions VCE = 350v, VBE = 0 VCE = 400v, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 5V, IC = 0.5A, f ... |
| Description |
Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type)
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| File Size |
47.71K /
2 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
2SK3050_1 2SK3050 2SK3050TL
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| OCR Text |
.../s VGS=0V 2000 Pulsed
300
350v 100V
1000 500
VDD=100V 8 350v
200
6 4
400v
200 100 50 0.05 0.1 0.2
100 2 0 0 0 16
2
3
4
5
10
12
14
0.5
1
2
5
10
TOTAL GATE CHARGE : Qg (nC)
... |
| Description |
2 A, 600 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
10V Drive Nch MOS FET
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| File Size |
87.43K /
6 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
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| Part No. |
APT77N60JC3
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| OCR Text |
...= -77A, dl S /dt = 100A/s, VR = 350v) Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/s, VR = 350v) Peak Diode Recovery
dv/ dt 5
V/ns...400v
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DR... |
| Description |
77 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
Super Junction MOSFET
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| File Size |
175.65K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT77N60JC3
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| OCR Text |
...= -77A, dl S /dt = 100A/s, VR = 350v) Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/s, VR = 350v) Peak Diode Recovery
dv/ dt 5
V/ns...400v
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DR... |
| Description |
Power MOSFET; Package: ISOTOP®; ID (A): 77; RDS(on) (Ohms): 0.035; BVDSS (V): 600;
Super Junction MOSFET
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| File Size |
256.87K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT94N60L2C3
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| OCR Text |
... = -94A, dl S/dt = 100A/s, VR = 350v) Reverse Recovery Charge (IS = -94A, dl S /dt = 100A/s, VR = 350v) Peak Diode Recovery
dv/ dt 5
Q
...400v
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DR... |
| Description |
Super Junction MOSFET
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| File Size |
168.62K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT94N60L2C3
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| OCR Text |
... = -94A, dl S/dt = 100A/s, VR = 350v) Reverse Recovery Charge (IS = -94A, dl S /dt = 100A/s, VR = 350v) Peak Diode Recovery
dv/ dt 5
Q
...400v
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DR... |
| Description |
Super Junction MOSFET
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| File Size |
243.07K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTC60HM35T3G
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| OCR Text |
... 0V, IS = - 72A IS = - 72A VR = 350v diS/dt = 200A/s Tj = 25C Tj = 25C 580 46
1.2 6
V V/ns ns C
July, 2006 2-6 APTC60HM35T3G - Rev 1
...400v RG=2.5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 20 40 60 80 100 120 ID... |
| Description |
Full - Bridge Super Junction MOSFET Power Module
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| File Size |
312.98K /
6 Page |
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it Online |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTC60HM70T3G
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| OCR Text |
... 0V, IS = - 39A IS = - 39A VR = 350v diS/dt = 100A/s Tj = 25C Tj = 25C 580 23
1.2 6
V V/ns ns C
www.microsemi.com
2-6
APTC60H...400v RG=5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID,... |
| Description |
Full - Bridge Super Junction MOSFET Power Module 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
313.65K /
6 Page |
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it Online |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
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| Part No. |
APTC60TDUM35PG
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| OCR Text |
... 0V, IS = - 72A IS = - 72A VR = 350v diS/dt = 200A/s Tj = 25C Tj = 25C 580 46
1.2 6
V V/ns ns C
July, 2006 2-6 APTC60TDUM35P G- Rev 1...400v RG=2.5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 20 40 60 80 100 120 ID... |
| Description |
Triple dual Common Source Super Junction MOSFET Power Module 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
304.35K /
6 Page |
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it Online |
Download Datasheet |
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