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  30v 8a Datasheet PDF File

For 30v 8a Found Datasheets File :: 3706    Search Time::1.5ms    
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    PMV20XN

NXP Semiconductors
Part No. PMV20XN
OCR Text ...rain-source voltage t j =25c --30v v gs gate-source voltage -12 - 12 v i d drain current v gs =4.5v; t amb =25c [1] --4.8a static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =4.8a; t j =25c - 1925m ? www.da...
Description N-channel Trench MOSFET

File Size 877.76K  /  16 Page

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    SSG4505

SeCoS Halbleitertechnologie GmbH
Part No. SSG4505
OCR Text 30v,RDS(ON) 14m[ P Channel -8.4A, -30v,RDS(ON) 20m[ Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 ...8a -0.02 _ _ _ _ _ _ -1.0 _ _ _ _ -3.0 100 -1 -25 20 Drain-Source Leakage Current ...
Description Enhancement Mode Power Mos.FET

File Size 977.96K  /  7 Page

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    NXP Semiconductors N.V.
Part No. BYR29X-800
OCR Text ...se recovery time i f =1a; v r =30v; di f /dt = 100 a/s; t j =25c; see figure 8 ; see figure 7 - 6075ns byr29x-800 all information pro...8a i frm repetitive peak forward current square-wave pulse; =0.5; t p = 25 s; t h 73 c -16a i fs...
Description Ultrafast power diode 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220

File Size 124.10K  /  12 Page

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    SSG4228

SeCoS Halbleitertechnologie GmbH
Part No. SSG4228
OCR Text 30v, r ds(on) 26m ? dual-n enhancement mode power mosfet 18-feb-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of s...8a, 30v, r ds(on) 26m ? dual-n enhancement mode power mosfet 18-feb-2011 rev. b page 2 of 4 ...
Description Dual-N Enhancement Mode Power MOSFET

File Size 821.25K  /  4 Page

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    DMN3025LFG

Diodes Incorporated
Part No. DMN3025LFG
OCR Text ... dmn3025lfg new product 30v n-channel enhanc ement mode mosfet powerdi ? product summary v (br)dss r ds(on) max i d max t ...8a ? 23 28 v gs = 4.5v, i d = 7.0a forward transfer admittance |y fs | ? 9 - s v ds = 10...
Description 30v N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 213.25K  /  6 Page

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    CHM6336JPT

Chenmko Enterprise Co. Ltd.
Part No. CHM6336JPT
OCR Text ...erse Transfer Capacitance VDS = 30v, VGS = 0V, f = 1.0 MHz 750 105 65 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q gd ton tr toff tf...8a VGS=10V V DD= 30v I D = 4.4A , VGS = 10 V RGEN= 1 22 3.0 4.5 15 4 37 5 29 nC 30 15 80 1...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 447.35K  /  3 Page

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    Electronic Theatre Controls, Inc.
Part No. JL124SDA
OCR Text ...vio input offset voltage vcc+ = 30v, vcc- = gnd, vcm = -15v -5 5 mv 1 -7 7 mv 2, 3 vcc+ = 2v, vcc- = -28v, vcm = 13v -5 5 mv 1 -7 7 mv 2, 3 ...8a, 8b tr(os) transient response: overshoot +vcc = 30v, -vcc = gnd 50 % 7, 8a, 8b sr+ slew rate: ris...
Description OP-AMP|QUAD|BIPOLAR|FP|14PIN|CERAMIC 运放|四|双极|计划生育| 14PIN |陶瓷

File Size 197.88K  /  16 Page

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    SSM4509GM

Silicon Standard Corp.
Part No. SSM4509GM
OCR Text ... ID G2 G2 S2 G1 S2 S1 G1 S1 30v 14m 10A -30v 20m -8.4A D1 D2 P-CH BVDSS RDS(ON) ID SO-8 Description Advanced Power MOSFETs fr...8a VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-8a VDS=-30v, VGS=0V VDS=-24V, VGS=0V VGS=20V I...
Description N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

File Size 403.29K  /  8 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZXMN6A07Z_07 ZXMN6A07Z ZXMN6A07ZTA
OCR Text ...1.3 0.95 ns ns ns ns VDD= 30v, VGS= 10V ID= 1.8a RG 6.0 VDS= 30v, VGS= 5V ID= 1.8a nC nC nC V ns nC Tj=25C, IS= 0.45A, VGS=0V Tj=25C, IF= 1.8a, di/dt=100A/ s VDS= 30v, VGS= 10V ID= 1.8a NOTES: (*) Measured under pulsed conditio...
Description 60V SOT89 N-channel enhancement mode mosfet

File Size 457.55K  /  8 Page

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    2SK4063LS

Sanyo Semicon Device
Part No. 2SK4063LS
OCR Text ...mA, VGS=0V VDS=500V, VGS=0V VGS=30v, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8a ID=8a, VGS=15V VDS=30v, f=1MHz VDS=30v, f=1MHz VDS=30v, f=1MHz VDS=5V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 51.13K  /  5 Page

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