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				International Rectifier
Part No.	IRF2204
OCR Text	..., VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 130A 52 nC VDS = 32V 59 VGS = 10V --- VDD = 20V --- ID = 130A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 13.9A 8.8A 56A 75W 0.6W/C 450mJ 5.0V/ns -55 to 150C 300C 1.67C/W 4C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	2DB1386Q-13 2DB1386R 2DB1386R-13 2DB1386Q-13R
OCR Text	...incorporated 2db1386q/r 20v pnp medium power transistor in sot89 features ? bv ceo > -20v ? i c = -5a high continuous current ? low saturation voltage v ce(sat) < -1v @ -4a ? complementary npn type: 2dd2098 ? tota...
Description	20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
File Size	268.85K / 6 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	...Junction to PCB (Typical) 2 20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 22A 14A 88A 100W 0.8W/C 500mJ 5.0V/ns -55 to 150C 300C 1.25C/W 3C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W ...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	... 40V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 160A VDS = 32V VGS = 10V VDD = 20V ID = 160A RG = 2.6 VGS = 10V V/C Reference to 25C, ID = 1mA VDS = VGS, ID = 250A e e d Between lead, 6mm (0.25in.) from package and center of...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	... 40V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 75A VDS = 32V VGS = 10V VDD = 20V ID = 75A RG = 2.5 VGS = 10V f f D G S Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 ...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA50N100BNTD2
OCR Text	...8 10 0 40 80 120 160 200 7v 10v 20v t c = 25 o c 15v 9v 8v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 0 40 80 120 160 200 10v 9v 20v t c = 125 o c 15v 8v 7v v ge = 6v collector curren...
Description	1000V, NPT Trench IGBT
File Size	813.17K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	..., VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 160 ID = 43A 29 nC VDS = 60V 55 VGS = 10V, See Fig. 6 and 13 --- VDD = 38V --- ID = 43A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

For 20v- Found Datasheets File :: 46292 Search Time::1.125ms
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