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FUJI[Fuji Electric]
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| Part No. |
E423121
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| OCR Text |
...1850 to 1910 MHz 869 to 894 MHz 1930 to 1990 MHz 890 to 915 MHz 1710 to 1785 MHz 935 to 960 MHz 1805 to 1880 MHz 925 to 960 MHz 1805 to 1880 MHz 1805 to 1880 MHz 1930 to 1990 MHz 1850 to 1880 MHz 1880 to 1910 MHz 1930 to 1960 MHz 1960 to 19... |
| Description |
SAW Dual Filter (700 to 2000 MHz)
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| File Size |
250.12K /
30 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXFC192207FH
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| OCR Text |
...z carrier spacing, bw 3.84 mhz 1930 mhz 1960 mhz 1990 mhz c192207fh_g1 gain efficiency
data sheet 2 of 9 rev. 04, 2014-07-15 pxfc192207fh dc characteristics characteristic conditions symbol min typ max unit drain-source... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
365.81K /
8 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXFC192207FHV3R250XTMA1
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| OCR Text |
... carrier spacing, bw 3.84 mhz 1930 mhz 1960 mhz 1990 mhz c192207fh_g1 gain efficiency
data sheet 2 of 9 rev. 04.1, 2016-06-22 pxfc192207fh dc characteristics characteristic conditions symbol min typ max ... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ?1990 MHz
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| File Size |
499.55K /
8 Page |
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it Online |
Download Datasheet |
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Tyco Electronics
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| Part No. |
MAPLST1820-030CF
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| OCR Text |
...ications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications 30...1990.0 MHz, f2 = 1990.1 MHz) Two-Tone Drain Efficiency (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA,... |
| Description |
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V
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| File Size |
177.62K /
5 Page |
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it Online |
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AVX
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| Part No. |
CP0603
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| OCR Text |
... - 1785 1805 - 1880 1850 - 1910 1930 - 1990 1895 - 1920 1880 - 1900 2400 - 2484 Coupling [dB] 18.51 18.51 181 17.51 181 17.51 141 12.51 121 121 11.51 121 121 101
Coupling, Return Loss, Isolation (dB)
P/N CP0603A****AW
I. Loss VSWR max ... |
| Description |
Thin Film Directional Couplers
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| File Size |
143.19K /
5 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19100HR3 MRF6S19100HSR3
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| OCR Text |
...lications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 -... |
| Description |
RF Power Field Effect Transistors
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| File Size |
399.25K /
12 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
PXFC191507FC
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| OCR Text |
... carrier spacing, bw 3.84 mhz 1930 imdl 1930 imdu 1960 imdl 1960 imdu 1990 imdl c191507fc_g3 0 10 20 30 40 50 60 16 17 18 19 20 21 22 30 35 40 45 50 55 efficiency (%) gain (db) output power (dbm) pulsed cw performance v dd = 2... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET
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| File Size |
367.13K /
7 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
PXFC191507FCV1R250XTMA1
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| OCR Text |
... carrier spacing, bw 3.84 mhz 1930 imdl 1930 imdu 1960 imdl 1960 imdu 1990 imdl c191507fc_g3 0 10 20 30 40 50 60 16 17 18 19 20 21 22 30 35 40 45 50 55 efficiency (%) gain (db) output power (dbm) pulsed cw performance v dd = 2... |
| Description |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ?1990 MHz
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| File Size |
365.01K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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