|
|
|
HYNIX
|
Part No. |
HY62SF16406C
|
OCR Text |
...SRAM organized as 256K words by 16bits. The HY62SF16406C uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power syste... |
Description |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
File Size |
128.06K /
11 Page |
View
it Online |
Download Datasheet |
|
|
|
HYNIX
|
Part No. |
HY62SF16406E
|
OCR Text |
...SRAM organized as 256K words by 16bits. The HY62SF16406D uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power syste... |
Description |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
File Size |
128.96K /
11 Page |
View
it Online |
Download Datasheet |
|
|
|
HYNIX SEMICONDUCTOR INC
|
Part No. |
HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I
|
OCR Text |
...M organized as 524,288 words by 16bits. The HY62SF16804A uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly wellsuited for the high density low power system... |
Description |
512K X 16 STANDARD SRAM, 100 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
File Size |
134.73K /
10 Page |
View
it Online |
Download Datasheet |
|
|
|
HYNIX
|
Part No. |
HY62SF16806A-I HY62SF16806A-C
|
OCR Text |
...data retention 524,288 words by 16bits. The HY62SF16806A * Standard pin configuration uses high performance full CMOS process - 48-uBGA technology and is designed for high speed and low power circuit technology. It is particularly wellsuite... |
Description |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
File Size |
136.14K /
11 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|