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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...: Pull = 5 pounds. Twist = 360C x 3. Protection: Epoxy uniform roll coated. Leads: Tinned copper. ENVIRONMENTAL SPECIFICATIONS Maximum T...VALUE 10% INDUCTANCE TOLERANCE ER PACKAGE CODE e2 JDEC LEAD FREE STANDARD GLOBAL PART NUMBER I ...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ....01 0.00001 t1/ t 2 = P DM x Z thJC 0.1 +TC 0.0001 0.001 0.01 P DM t1 t2 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3710 550 1 ...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...tor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Therm...value determined from sample failure population. 100% RG = 25, IAS = 75A, VGS =10V. Part not tested ...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ....16 Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n)...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...te Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance ReverseTransfer Capacitance Test Conditions V DS > I D(on) x R DS...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ba...value 1.8V devices is changed. K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...H MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. A...Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3. W...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...H MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1...value 1.8V devices is changed. K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 Initial issue. Draft Date July 17th 2000 Rem...value : 100ns --> 20ns Note : For more detailed features and specifications including FAQ, please...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33

STMicroelectronics N.V.
意法半导
ST Microelectronics
Part No. L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33-L4973D51 L4973D5 L4973D5.1 L4973D51 LV4973D L4973 L4973V5.1 L4973V51 -L4973D33-L4973D51
OCR Text ... OUT 3(3) OUT D94IN161B Pin x = Powerdip Pin (x) = S020 2/16 L4973V3 - L4973V5 - L4973D3 - L4973D5 THERMAL DATA Symbol Rth(j-pin...Value 58 -1 -5 int. limit. 14 70 12 13 6 -0.3 5.5 -0.3 Vcc -0.3 5 1.3 2 4 -40 to 150 V V V V V V V V...
Description RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效,5安培开关稳压器
3.5A STEP DOWN SWITCHING REGULATOR

File Size 221.38K  /  16 Page

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