|
|
|
HARRIS SEMICONDUCTOR Intersil, Corp. INTERSIL[Intersil Corporation]
|
Part No. |
FSL430R4 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
|
OCR Text |
...METER Drain to Source Breakdown volts Gate to Source Threshold volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State volts D...2a tH = 500ms; VH = 25V; IH = 1A MAX 0.56 6 125 250 UNITS A A mV mV
3-52
FSL430D, FSL430R Rad ... |
Description |
2a/ 500V/ 2.50 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 2a, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 2 A, 500 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
File Size |
46.19K /
8 Page |
View
it Online |
Download Datasheet |
|
|
|
TY Semiconductor Co., Ltd
|
Part No. |
AOD2C60
|
OCR Text |
... 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 ...2a 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 t case (c) figure 12: current de-rating (note f) curr... |
Description |
Trench Power AlphaMOS-II technology
|
File Size |
799.52K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
Intersil, Corp. INTERSIL[Intersil Corporation] http://
|
Part No. |
FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
|
OCR Text |
...METER Drain to Source Breakdown volts Gate to Source Threshold volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State volts D...2a 2.0 12V QG NORMALIZED rDS(ON)
1.5
QGS
QGD
1.0
VG
0.5
CHARGE
0.0 -80
-4... |
Description |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆,拉德硬,SEGR耐,N沟道功率MOSFET 3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
File Size |
45.72K /
8 Page |
View
it Online |
Download Datasheet |
|
|
|
Alpha & Omega Semiconductor...
|
Part No. |
AOI4N60 AOU4N60 AOD4N60
|
OCR Text |
... 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) ...2a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volt... |
Description |
600V,4A N-Channel MOSFET
|
File Size |
531.02K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
Alpha & Omega Semiconductor...
|
Part No. |
AOI4S60
|
OCR Text |
... 2 4 6 8 10 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 2 4 6 8 10 v ...2a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction tempera... |
Description |
600V 4A a MOS Power Transistor
|
File Size |
448.86K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|