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IRF[International Rectifier]
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Part No. |
JANTXV2N6796 JANTX2N6796
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OCR Text |
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HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very...205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 K... |
Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A) POWER MOSFET N-CHANNEL(BVdss=100V Rds(on)=0.18ohm Id=8.0A)
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File Size |
197.90K /
6 Page |
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it Online |
Download Datasheet |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4
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OCR Text |
... Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of...205AF
D
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CAUTION: These devices are sensitive to electrostatic discharge; follow prop... |
Description |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压,1.50欧姆,拉德硬,SEGR性,P通道功率MOSFET 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, to-205af From old datasheet system 3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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File Size |
45.44K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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