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ST Microelectronics
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| Part No. |
STW20NK50Z
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| OCR Text |
supermesh?power mosfet n typical r ds (on) = 0.23 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n ver...a very good dv/dt capability for the most demanding applications. such series comple- ments st full ... |
| Description |
N-CHaNNEL 500V - 0.23 OHM - 17a TO-247 ZENER-PROTECTED supermesh POWERMOSFET
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| File Size |
298.51K /
9 Page |
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ST Microelectronics
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| Part No. |
STD5NK60ZT4
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| OCR Text |
supermesh?power mosfet n typical r ds (on) = 1.2 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very ...a very good dv/dt capability for the most demanding applications. such series comple- ments st full ... |
| Description |
N-CHaNNEL 600V - 1.2 OHM - 5a TO-220/TO-220FP/DPaK ZENER-PROTECTED supermesh POWER MOSFET
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| File Size |
583.17K /
12 Page |
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STMicroelectronics N.V.
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| Part No. |
STF9NK60ZFD
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| OCR Text |
...220/to-220fp/d 2 pak fast diode supermesh? mosfet n typical r ds (on) = 0.85 w n high dv/dt capability n 100% avalanche tested n gate charge...a fast body-drain recovery diode. such series comple- ments the fdmesh? advanced technology. applica... |
| Description |
Fuse Holder; Fuse Size/Group:13/32 x 1-1/2 "; Body Material:Thermoplastic; Leaded Process Compatible:Yes; Mounting Type:Screw/Quick Connect RoHS Compliant: Yes N沟道600V.85欧姆a TO-220/TO-220FP/D2PaK快速二极supermesh功率MOSFET
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| File Size |
363.12K /
9 Page |
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STMicroelectronics N.V.
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| Part No. |
STB10NK60ZT4
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| OCR Text |
...-247/isowatt218 zener-protected supermesh ? power mosfet n typical r ds (on) = 0.65 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very low intrinsic capacitances n very good manufacturing repeatibilit... |
| Description |
TRaNSISTOR | MOSFET | N-CHaNNEL | 600V V(BR)DSS | 10a I(D) | TO-263aB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 10a条（丁）|63aB
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| File Size |
256.97K /
16 Page |
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STMicroelectronics
ST Microelectronics
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| Part No. |
STU6N65K3 STF6N65K3 STFI6N65K3
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| OCR Text |
...applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suit... |
| Description |
N-channel 650 V, 1.1 Ohm typ., 5.4 a supermesh3(TM) Power MOSFET in I2PaKFP package
N-channel 650 V, 1.1 ohm typ., 5.4 a supermesh3 Power MOSFET in TO-220FP, I PaKFP, IPaK
N-channel 650 V, 1.1 Ohm typ., 5.4 a supermesh3(TM) Power MOSFET in TO-220FP package
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| File Size |
882.75K /
16 Page |
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it Online |
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STMicroelectronics
STATEK CORPORATION
ST Microelectronics
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| Part No. |
STF6N62K3 STP6N62K3 STI6N62K3 STFI6N62K3 STU6N62K3
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| OCR Text |
...applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suit... |
| Description |
N-channel 620 V, 0.95 Ohm, 5.5 a supermesh3(TM) Power MOSFET in I2PaKFP package
N-channel 620 V, 0.95 Ω typ., 5.5 a supermesh3 Power MOSFET in TO-220FP, IPaKFP, IPaK, TO-220, IPaK packages
N-channel 620 V, 0.95 Ω typ., 5.5 a supermesh3 Power MOSFET in TO-220FP, I2PaKFP, I2PaK, TO-220, IPaK packages
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| File Size |
1,027.86K /
19 Page |
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it Online |
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