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STMICROELECTRONICS
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| Part No. |
STB11NM60-1 STB11NM60T4
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| OCR Text |
... 11a to-220/fp/d 2 pak/i 2 pa k mdmesh? power mosfet general features high dv/dt and avalanche capabilities 100% avalanche tested low inp...a new revolutionary mosfet technology that associat es the multiple drain process with the company... |
| Description |
11 a, 600 V, 0.45 ohm, N-CHaNNEL, Si, POWER, MOSFET, TO-262aa
11 a, 600 V, 0.45 ohm, N-CHaNNEL, Si, POWER, MOSFET, TO-263aB
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| File Size |
346.06K /
16 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STW43NM50N
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| OCR Text |
...37 a - to-247 second generation mdmesh? power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input ...a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resis... |
| Description |
Power MOSFETs
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| File Size |
164.56K /
9 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STW43NM60N
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| OCR Text |
... 35a - to-247 second generation mdmesh? power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input ...a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resis... |
| Description |
Power MOSFETs
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| File Size |
162.60K /
9 Page |
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it Online |
Download Datasheet |
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STMICROELECTRONICS
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| Part No. |
STB13NM60N
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| OCR Text |
mdmesh? ii power mosfet in d 2 pak, dpak, to-220fp, to-220, to-247 features 100% avalanche tested low input capacitance and gate charge l...a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resis... |
| Description |
11 a, 600 V, 0.36 ohm, N-CHaNNEL, Si, POWER, MOSFET, TO-263aB
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| File Size |
1,250.05K /
19 Page |
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it Online |
Download Datasheet |
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Price and Availability
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