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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...= 25C, IF = -6.7A --- 96 190 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = -25V, starting TJ = 25C, L...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	...= 25C, IF = -11A --- 320 640 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = -25V, starting TJ = 25C, L...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGA25N120FTD
OCR Text	... 200A/s 20 200A/s 40 di/dt = 100A/s di/dt = 100A/s 10 30 20 10 15 20 25 Forward Current, IF [A] 30 0 10 15 20 25 30 Forward Current, IF [A] Figure 21. Reverse Recovery Time 1200 Reverse ...
Description	1200V, 25A Field Stop Trench IGBT
File Size	695.07K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	... = 25C, IF = -7.2A --- 84 130 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -7.2A, di/dt ...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...= 25C, IF = -18A --- 280 520 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = -25V, starting TJ = 25C, L...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...= 25C, IF = -10A --- 110 160 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycl...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...= 25C, IF = -10A --- 110 160 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -10A, di/dt ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IRFPG30 SIHFPG30 SIHFPG30-E3 IRFPG30PBF
OCR Text	...A (see fig. 12). c. ISD 3.1 A, di/dt 80 A/s, VDD 600, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91252 S-81394-Rev. A, 21-Jul-08 www.vishay.com 1 IRFPG30,...
Description	Power MOSFET
File Size	1,698.83K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	VS-8E2TH06-E VS-8E2TH06-M VS-8E2TH06FP-E
OCR Text	...ecovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 17 23 ns i f = 8.0 a, di f /dt = 100 a/s, v r = 30 v - 22 25 t j = 25 c i f = 8 a di f /dt = 200 a/s v r = 390 v -22- t j = 125 c -43- i f = 8 a di f /dt = 600 a/s v r...
Description	Hyperfast Rectifier, 8 A FRED Pt
File Size	173.59K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	VS-10ETF12PBF
OCR Text	...te of fall of forward current - di/ dt (a/ s) 1 a 5 a ma ximum reverse rec overy time - trr (s) i = 10 a fm 2 a 8 a 10etf.. series t = 150 c j 5 10etf12pbf quiet ir series bulletin i2188 12/04 www.irf.com fig. 14 - thermal im...
Description	FAST SOFT RECOVERY RECTIFIER diODE
File Size	232.19K / 7 Page	View it Online	Download Datasheet

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