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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
RN2112FT RN2113FT
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| Description |
IGBT modules up to 600v Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
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| File Size |
72.56K /
3 Page |
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it Online |
Download Datasheet
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRG4RC10KD IRG4RC10 IRG4RC10KDTRR
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| Description |
TRANSISTOR | IGBT | N-CHAN | 600v V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600v的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600v, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600v UltraFast 8-25 kHz Copack IGBT in a D-Pak package
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| File Size |
188.18K /
10 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FFH50US60S
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| Description |
50A, 600v StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600v Stealth⑩ Diode
50A, 600v Stealth Diode
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| File Size |
88.79K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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