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For bond Found Datasheets File :: 7521 Search Time::1.719ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7240-100A
OCR Text	...rce lead from package to source bond pad VDD = 50 V; RL = 1.5 ; VGS = 10 V; RG = 5.6 ; VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - - - - - - - - 1720 216 133 12 55 48 30 2.5 2293 259 182 - - - - - pF pF pF ns ns ns ns nH - - 34 - 40 100 m...
Description	TrenchMOS standard level FET TrenchMOS TM standard level FET TrenchMOS⑩ standard level FET
File Size	106.46K / 13 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXUC120N10
OCR Text	...l Silicon chip on Direct-Copper-bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacit...
Description	Trench Power MOSFET ISOPLUS220
File Size	55.54K / 2 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LPV3000 LP3000
OCR Text	...-Efficiency at 18 GHz SOURCE bond PAD (x2) GATE PAD (x4) DIE SIZE: 28.3 x 16.5 mils (720 x 420 m) DIE THICKNESS: 2.6 mils (65 m typ.) bondING PADS: 1.9 x 2.4 mils (50 x 60 m typ.) DESCRIPTION AND APPLICATIONS The LP3000 is an A...
Description	2W Power PHEMT
File Size	46.89K / 2 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MPXV2053DP MPXV2053G MPXV2053GP MPX2053D MPX2053GSX MPX2053GVP MPX2053 MPX2053DP MPX2053GP
OCR Text	...YP SPAN RANGE (TYP) MIN WIRE bond SILICONE DIE COAT STAINLESS STEEL METAL COVER DIE P1 EPOXY CASE 12.5 1.8 25 3.6 37.5 5.4 50 7.25 OFFSET (TYP) LEAD FRAME Figure 3. Output versus Pressure Differential Figure...
Description	50 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors 50 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
File Size	185.37K / 12 Page	View it Online	Download Datasheet

				Freescale (Motorola) ETC[ETC]
Part No.	MPXV5004DP MPXV5004G MPXV5004G6T1 MPXV5004G6U MPXV5004G7U MPXV5004GC6T1 MPXV5004GC7U MPXV5004GP MPXV5004GVP MPXV5004
OCR Text	...ROSILICONE GEL DIE COAT P1 WIRE bond DIE STAINLESS STEEL CAP +5 V Vout Vs IPS OUTPUT THERMOPLASTIC CASE LEAD FRAME 1.0 mF P2 DIFFERENTIAL SENSING ELEMENT DIE bond 0.01 mF GND 470 pF Figure 2. Cross-Sectional D...
Description	Integrated Pressure Sensor Integrated Silicon Pressure Sensor On-Chip Signal Conditioned Temperature Compensated and Calibrated Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
File Size	263.36K / 12 Page	View it Online	Download Datasheet

				ETC Motorola, Inc ON Semiconductor
Part No.	MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
OCR Text	...ead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- LS -- 13 -- 5.0 -- nH nH ta tb QRR -- -- -- -- 1.0 0.9 390 ...
Description	16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
File Size	275.97K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NL17SV32-D NL17SV32XV5T2
OCR Text	...TEMPERATURE VERSUS TIME TO 0.1% bond FAILURES Junction Temperature C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 http://onsemi.com 2 NL17SV32...
Description	Single Gate 2-Input OR Gate
File Size	41.82K / 6 Page	View it Online	Download Datasheet

				TEMIC[TEMIC Semiconductors]
Part No.	U6268B
OCR Text	... GND-Pins By means of a GND bond from the chip to Pin 1 and Pin 8, high ground breakage security is achieved and lowest voltage drop and ground shift between IC- and circuit ground is provided. The four GND pins and the die pad are dire...
Description	Side-Airbag Sensor Dual Interface
File Size	176.12K / 12 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPG100P UPG101P
OCR Text	... 2. Tests on Sampling Basis 2-1 bond Pull Tests (In case of recommended chip handling) MIL-STD-883 Method 2011 5 samples/wafer and 20 points tested Accept 0/Reject 1 2-2 Tests in Standard Package Test the electrical characteristics of chips...
Description	WIDE BAND AMPLIFIER CHIPS
File Size	97.39K / 8 Page	View it Online	Download Datasheet

For bond Found Datasheets File :: 7521 Search Time::1.719ms
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