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  7-12ghz Datasheet PDF File

For 7-12ghz Found Datasheets File :: 350    Search Time::2.781ms    
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    EPA160A-100P

Excelics Semiconductor, Inc.
Part No. EPA160A-100P
OCR Text ...ltage igs=1.6ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 33* o c/w ? overall rth depends on case mounting. absolute maximum ratings for continuous operation at 25 c symbols param eters cont...
Description High Efficiency Heterojunction Power FET

File Size 45.63K  /  2 Page

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    EPA040A EPA040AV

Excelics Semiconductor, Inc.
Part No. EPA040A EPA040AV
OCR Text ...breakdown voltage igs=1.0ma - 7 - 14 - 7 - 14 v rth thermal resistance (au - sn eutectic attach) 105 77 o c/w maximum ratings at 25 o c symbols parameters epa040a epa040av absolute...
Description High Efficiency Heterojunction Power FET

File Size 46.62K  /  2 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1951A_1 MGF1951A MGF1951A1
OCR Text ...f=12GHz,Pin=-5dBm -8 35 -0.3 11 7 Limits TYP. -15 60 -1.4 13 9 MAX -120 -3.5 --- Unit V mA V dBm dB MITSUBISHI (1/5) June /2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1951A Microwave Power MES FET (Leadless Ce...
Description Microwave Power MES FET

File Size 142.27K  /  5 Page

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    EPA030D

Excelics Semiconductor, Inc.
Part No. EPA030D
OCR Text ... drain to source voltage 10 v 7 v v gs gate to source voltage -6 v -3.5 v i ds drain current idss idss i gsf forward gate current 15 ma 2.5 ma p in input power 15 dbm @ 3db compression p t total power dissipation 1....
Description High Performance Heterojunction Dual-Gate FET

File Size 88.92K  /  2 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC4419G
OCR Text ... ID=10mA ) f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Magn. 0.994 0.976 0.950 0.917 0.880 0.842 0.805 0.771 0.739 0.711 0.687 0.666 0.648 0.634 0.622 0.613 0.607 0.603 0.600 0.600 0.601 0.603 0.606 0.610 0...
Description InGaAs HEMT Chip

File Size 51.23K  /  5 Page

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    EPA030C EPA030CV

Excelics Semiconductor, Inc.
Part No. EPA030C EPA030CV
OCR Text ...oltage i gs = 1.0ma -7 -14 -7 -14 v r th thermal resistance(au-sn eutectic attach) 125 95 o c/w maximum ratings at 25 o c epa030c epa030cv symbols parameters absolute 1 continuous 2 absolute 1 cont...
Description High Efficiency Heterojunction Power FET

File Size 90.65K  /  2 Page

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    EPA030B

Excelics Semiconductor, Inc.
Part No. EPA030B
OCR Text ....4 8.447 140.3 0.015 63.7 0.915 - 18.5 23.0 0.919 129.8 4.615 - 74.5 0.030 64.6 1.285 - 140.4 4.0 0.917 - 56.0 8.042 128.6 0.019 55.8 0.901 - 23.4 24.0 0.944 125.5 4.605 - 89.6 ...
Description High Performance Heterojunction Dual-Gate FET

File Size 40.90K  /  2 Page

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    TC2101

Transcom, Inc.
Part No. TC2101
OCR Text 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw ...12ghz 1.5 1.8 db g a associated gain at v ds = 2 v, i ds = 10 ma, f = 12ghz 7 8 db p 1...
Description Plastic Packaged Low Noise PHEMT GaAs FETs

File Size 163.25K  /  4 Page

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    EPA240B

Excelics Semiconductor, Inc.
Part No. EPA240B
OCR Text ...e breakdown voltage igs=2.4ma -7 -14 -7 -14 v rth thermal resistance (au-sn eutectic attach) 20 15 o c/w maximum ratings at 25 o c symbols param eters epa240b epa240bv absolute 1 continuous 2 absolute 1...
Description 8-12V high efficiency heterojunction power FET

File Size 34.15K  /  2 Page

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    EFA025A

Excelics Semiconductor, Inc.
Part No. EFA025A
OCR Text ...e breakdown voltage igs=1.0ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 155 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-...
Description 6-12V low distortion GaAs power FET

File Size 32.78K  /  3 Page

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For 7-12ghz Found Datasheets File :: 350    Search Time::2.781ms    
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