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Nell Semiconductor Co., Ltd
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Part No. |
85DR12M
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OCR Text |
...d( r ) 02 04 06 08 10 12 16 200 400 600 800 1000 1200 1600 300 500 700 900 1100 1300 1700 9 glass passivated chips welder 02 to 12 16 110 140 110 -65 to 150 1600 200 to 1200 4.5 do-203ab(do-5) 85d(r) 85
semiconductor rohs rohs page 2 of 6... |
Description |
Glass Passivated Standard Recovery Diodes (Stud Version), 85A
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File Size |
572.73K /
6 Page |
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MICROSEMI[Microsemi Corporation]
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Part No. |
APTGF300SK120G
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OCR Text |
...
July, 2006
Max ratings 1200 400 300 600 20 1780
Unit V A V W
APTGF300SK120G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collecto... |
Description |
Buck chopper NPT IGBT Power Module
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File Size |
240.12K /
5 Page |
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it Online |
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Powerex Power Semicondu...
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Part No. |
CM1200E4C-34N
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OCR Text |
...15 8 t j = 125 c 2400 800 1600 400 1200 2000 0 2400 800 1600 400 1200 2000 gate emitter voltage, v ge , (volts) collector current, i c , (amperes ) transfer characteristics (typical) 0 12 4 8 2 6 10 v ce = 20v t j = 25c t j = 125c t j... |
Description |
Chopper HVIGBT Module 1200 Amperes/1700 Volts
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File Size |
540.37K /
7 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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Part No. |
APTGF300U120DG
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OCR Text |
...RoHS compliant Max ratings 1200 400 300 600 20 1780 600A @ 1200V Unit V A V W
G
CK
E CK
C
EK G
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collect... |
Description |
Single Switch with Series diodes NPT IGBT Power Module
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File Size |
236.33K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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Part No. |
APTGF350A60G
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OCR Text |
... = 400A VR = 400V di/dt =800A/s 400 1.6 1.9 1.4 180 220 1560 5800 Min 600 VR=600V 750 1500 1.8 V
APTGF350A60G - Rev 2 July, 2006
Min
...1200 Ic, Collector Current (A) 1000 800 600
TJ=125C 250s Pulse Test < 0.5% Duty cycle TJ=-55C TJ=25... |
Description |
Phase leg NPT IGBT Power Module
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File Size |
271.51K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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Part No. |
APT30GP60JDQ1
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OCR Text |
...Y LOSS (J)
1200 1000 800 600 400 200 0
V = 400V CE V = +15V GE R = 5
G
1400 1200 1000 800 600 400 200 0
= 400V V CE = +15V V GE R = 5
G
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
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Description |
POWER MOS 7 IGBT
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File Size |
454.07K /
9 Page |
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it Online |
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Price and Availability
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