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ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
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| Part No. |
L6229PDTR L6229 L6229D L6229DTR L6229N L6229PD L6229DPTR
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| OCR Text |
... to 7 -0.3 to 7 -0.3 to 7 -1 to 4 3.55 1.4 -40 to 150
V V V V V V A A C
2/25
L6229
Table 3. Recommended Operating Condition
Symbo...layer FR4 PCB with a dissipating copper surface on the bottom side of 6 cm2 (with a thickness of 35 ... |
| Description |
DMOS DRIVER FOR THREE-PHASE BRUSHLESS DC MOTOR
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| File Size |
444.55K /
25 Page |
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ANACHIP[Anachip Corp]
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| Part No. |
ANP007
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| OCR Text |
...scription 1.3 Pin Assignments 1.4 Pin Descriptions 1.5 Block Diagram 1.6 Absolute Maximum Ratings
2. Hardware
2.1 2.2 2.3 2.4 Introducti...layer
Figure 6. Top layer
Figure 7. Bottom layer
Anachip Corp. www.anachip.com.tw 8/11
R... |
| Description |
Dual Buck Converter
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| File Size |
233.05K /
11 Page |
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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
AN908
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| OCR Text |
...andard VRM pinout is used, with 4 bit for Voltage Identify system, Power Good, Enable and constant limiting current functions are available....Layer 1 (77.47 x 78.74mm)
Figure 8. PCB Layout - Layer 2 (77.47 x 78.74mm)
6/9
AN908 APPLIC... |
| Description |
HIGH PERFORMANCE VRM USING L4990A, FOR PENTIUM PRO PROCESSOR
APPLICATION NOTE
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| File Size |
87.63K /
9 Page |
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MOTOROLA[Motorola, Inc]
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| Part No. |
AN211A
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| OCR Text |
...te. For the structure of Figure 4, consider a positive gate potential (see Figure 5). Positive charges at the metal side of the metal-oxide ...layer and a nitride layer. The oxide layer serves as a protective coating for the FET surface and to... |
| Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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| File Size |
327.70K /
12 Page |
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VISAY[Vishay Siliconix]
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| Part No. |
AN101
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| OCR Text |
...x 10-Mar-97
AN101
In Figure 4, consider the case where VDS = 0 and where a negative voltage VGS is applied to the gate. Again, a depletion layer has built up. If a small value of VDS were now applied, this depletion layer would limit th... |
| Description |
MOSFETs
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| File Size |
42.22K /
5 Page |
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ETC[ETC]
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| Part No. |
AN-937
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| OCR Text |
...NG IN SLOW RISE OF IS
Figure 4. Diagrammatic Representation of Effects When Switching-ON
Figure 5. Waveforms at Turn-OFF
At time, t0, the drive pulse starts to rise. At t0 it reaches the threshold voltage of the HEXFET(R)s and the ... |
| Description |
Gate Drive Characteristics and Requirements for HEXFET
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| File Size |
361.85K /
21 Page |
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http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
AN-5026
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| OCR Text |
...s) 3. Mobile telephone handsets 4. High density disk drives 5. Camcorders 6. Digital cameras BGA advantages compared to fine pitch QFP or TS...layer, allowing connection to the first internal layer of the board. Two 4 millimeter layers can be ... |
| Description |
Using BGA Packages
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:15-19 RoHS Compliant: No
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| File Size |
720.16K /
8 Page |
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Price and Availability
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