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350v 400v Datasheet PDF File

For 350v 400v Found Datasheets File :: 488 Search Time::1.609ms
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				Infineon Technologies AG
Part No.	IKW50N60T Q67040S4718
OCR Text	... 100C 125C 150C 0m J 300V 350v 400v 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 50A, RG = 7, Dy...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	413.27K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4714 IKP04N60T
OCR Text	...0C 125C 150C 0.00m J 300V 350v 400v 450V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 4A, RG = 47, Dynamic test circu...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	358.64K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4717 IKW30N60T
OCR Text	...50C 75C 100C 125C 150C 350v 400v 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 30A, RG = 10, D...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极 From old datasheet system
File Size	394.33K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T
OCR Text	...50C 75C 100C 125C 150C 350v 400v 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 30A, RG = 10, D...
Description	1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
File Size	375.15K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4726 IGW75N60T
OCR Text	... 100C 125C 150C 0m J 300V 350v 400v 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 75A, RG = 5, Dy...
Description	1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Low Loss IGBT in Trench and Fieldstop technology
File Size	365.66K / 12 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	MPSA44
OCR Text	...voltage: VCEO=400v(MPSA44) VCEO=350v(MPSA45) Collector current up to 300mA Complement to MPSA94/93 Collector Dissipation: Pc(max)=625mW 1 APPLICATION Telephone switching *High voltage switch SOT-89 1:EMITTER 2: COLLECTOR 3: B...
Description	HIGH VOLTAGE TRANSISTOR
File Size	75.81K / 3 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	APTC60TAM35PG
OCR Text	... 0V, IS = - 72A IS = - 72A VR = 350v diS/dt = 200A/s Tj = 25C Tj = 25C 580 46 1.2 6 V V/ns ns C July, 2006 2-6 APTC60TAM35P G- Rev 1 ...400v RG=2.5 T J=125C L=100H 100 tr and t f (ns) 250 200 150 100 50 0 0 20 40 60 80 100 120 ID...
Description	Triple phase leg Super Junction MOSFET Power Module
File Size	304.88K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KSP44BU12 KSP44TF-12 KSP44-12 KSP45TA KSP45TA-12
OCR Text	... ksp45: 350v ? collector power dissipation: p c (max) = 625mw ordering information absolute maximum ratings stres...400v, i e = 0 v cb = 320v, i e = 0 0.1 0.1 ? a ? a i ces collector cut-off current : ksp44 : ks...
Description	NPN Epitaxial Silicon Transistor
File Size	247.91K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGW50N60T IGP50N60T09
OCR Text	... 100C 125C 150C 0m J 300V 350v 400v 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400v, VGE = 0/15V, IC = 50A, RG = 7, Dy...
Description	Low Loss IGBT in TrenchStop and Fieldstop technology
File Size	448.15K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGB50N60T IGB50N60T09
OCR Text	... switching energy losses 300v 350v 400v 450v 500v 550v 0mj 1mj 2mj 3mj 4mj e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15...
Description	Low Loss IGBT in TrenchStop technology
File Size	460.78K / 12 Page	View it Online	Download Datasheet

For 350v 400v Found Datasheets File :: 488 Search Time::1.609ms
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