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3-micron Datasheet PDF File

For 3-micron Found Datasheets File :: 6043 Search Time::1.766ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifica...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 36 micro-X Package 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specif...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	44.11K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Agilent (Hewlett-Packard) ETC[ETC] HP[Agilent(Hewlett-Packard)] List of Unclassifed Manufacturers
Part No.	ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text	... 137 GATE DRAIN 1 3 GAIN (dB) 15 MAG 10 S 21 MSG 2 SOURCE 5 0 1 5 FREQUENCY (GHz) 10 20 Inser...micron gate length with a total gate periphery of 250 microns. Proven gold based metallization syste...
Description	Surface Mount Gallium Arsenide FET for Oscillators
File Size	43.73K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21170
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Package Description The ATF-211...
Description	0.5-6 GHz Low Noise Gallium Arsenide FET
File Size	41.90K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	... 211 GATE DRAIN 1 3 2 SOURCE 20 GAIN (dB) MSG MAG 10 S 21 0 0.1 1 FREQUENCY (GHz) 10 This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total ga...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-25170
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device....
Description	0.5-10 GHz Low Noise Gallium Arsenide FET
File Size	40.04K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-25570
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device....
Description	0.5-10 GHz General Purpose Gallium Arsenide FET
File Size	39.81K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-25735
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device....
Description	0.5-10 GHz General Purpose Gallium Arsenide FET
File Size	41.61K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifica...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	42.07K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884
OCR Text	...GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 84 Plastic Package Description The ATF...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	39.76K / 4 Page	View it Online	Download Datasheet

For 3-micron Found Datasheets File :: 6043 Search Time::1.766ms
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