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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF18030BLR3
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| OCR Text |
...applications. specified for gsm 1930 - 1990 mhz. ? typical gsm performance: power gain - 14 db (typ) @ 30 watts efficiency - 50% (typ) @ 30 watts ? capable of handling 5:1 vswr, @ 26 vdc, 30 watts cw output power features ? internally m... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
344.88K /
8 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
NWR190
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| OCR Text |
...ve Filter Passband: PCS CDMA Rx 1930 .. 1990 MHz High selectivity and low temperature drift (TCF = -18 ppm/K) Leadless Plastic Package for Surface Mounted Technology (SMT) Thin Small Leadless Plastic Package Small Package dimensions of 2.0 ... |
| Description |
CDMA RX BAW-filter for PCS Band
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| File Size |
128.10K /
7 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G21L-160P BLF7G21LS-160P
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| OCR Text |
...(db) (%) (dbc) 2-carrier w-cdma 1930 to 1990 1080 28 45 18 34 ? 30 [1] 1-carrier w-cdma 1930 to 1990 1080 28 50 18.0 36 ? 34 [2]
blf7g21l-160p_7g21ls-160p all information provided in this document is subject to legal disclaimers. ? nxp b.... |
| Description |
160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz
Power LDMOS transistor BLF7G21L-160P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G21L-160P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
Power LDMOS transistor BLF7G21LS-160P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF7G21LS-160P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
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| File Size |
134.37K /
15 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MRF19045LSR3 MRF19045LR3
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| OCR Text |
...er N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 ... |
| Description |
1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS
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| File Size |
565.98K /
12 Page |
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MOTOROLA
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| Part No. |
MRF6S18100N
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| OCR Text |
...quency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain -- 14.5 dB Drain Efficiency -- 49% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1... |
| Description |
The MRF6S18100NR1 and MRF6S18100NBR1 are designed for GSM
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| File Size |
693.63K /
20 Page |
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MOTOROLA
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| Part No. |
MRF6S19060N
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| OCR Text |
...lications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 -... |
| Description |
1930鈥?990 MHz, 12 W Avg., 28 V, 2 x N鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
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| File Size |
605.95K /
16 Page |
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it Online |
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MOTOROLA
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| Part No. |
MRF6S19100N
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| OCR Text |
...lications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 -... |
| Description |
MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
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| File Size |
613.04K /
16 Page |
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it Online |
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MOTOROLA
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| Part No. |
MRF6S19140H
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| OCR Text |
...lications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 2... |
| Description |
MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
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| File Size |
435.04K /
12 Page |
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it Online |
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